MMBF0201NLT1G Todos los transistores

 

MMBF0201NLT1G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MMBF0201NLT1G
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 1.25 W
   Voltaje máximo drenador - fuente |Vds|: 20 V
   Voltaje máximo fuente - puerta |Vgs|: 12 V
   Corriente continua de drenaje |Id|: 5 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 1 V
   Carga de la puerta (Qg): 12 nC
   Tiempo de subida (tr): 17 nS
   Conductancia de drenaje-sustrato (Cd): 105 pF
   Resistencia entre drenaje y fuente RDS(on): 0.028(typ) Ohm
   Paquete / Cubierta: SOT23

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MMBF0201NLT1G Datasheet (PDF)

 ..1. Size:878K  cn vbsemi
mmbf0201nlt1g.pdf

MMBF0201NLT1G
MMBF0201NLT1G

MMBF0201NLT1Gwww.VBsemi.twN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)e Qg (Typ.)Definition0.028 at VGS = 4.5 V TrenchFET Power MOSFET6a 100 % Rg Tested20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC0.050 at VGS = 1.8 V 5.6APPLICATIONS DC/DC

 2.1. Size:140K  motorola
mmbf0201nlt1.pdf

MMBF0201NLT1G
MMBF0201NLT1G

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBF0201NLT1/DMMBF0201NLT1Low rDS(on) Small-Signal MOSFETsMotorola Preferred DeviceTMOS Single N-ChannelField Effect TransistorsNCHANNELENHANCEMENTMODEPart of the GreenLine Portfolio of devices with energycon-TMOS MOSFETserving traits.rDS(on) = 1.0 OHMThese miniature surface mount MOSFETs ut

 2.2. Size:62K  onsemi
mmbf0201nlt1-d.pdf

MMBF0201NLT1G
MMBF0201NLT1G

MMBF0201NLT1Preferred DevicePower MOSFET300 mAmps, 20 VoltsN-Channel SOT-23These miniature surface mount MOSFETs low RDS(on) assurehttp://onsemi.comminimal power loss and conserve energy, making these devices idealfor use in small power management circuitry. Typical applications are300 mAMPS - 20 VOLTSdc-dc converters, power management in portable andRDS(on) = 1 Wbattery

 4.1. Size:164K  onsemi
mmbf0201nl mvmbf0201nl.pdf

MMBF0201NLT1G
MMBF0201NLT1G

MMBF0201NL,MVMBF0201NLPower MOSFET300 mAmps, 20 VoltsN-Channel SOT-23www.onsemi.comThese miniature surface mount MOSFETs low RDS(on) assure300 mAMPS - 20 VOLTSminimal power loss and conserve energy, making these devices idealfor use in small power management circuitry. Typical applications areRDS(on) = 1 Wdc-dc converters, power management in portable andbattery-powered

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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