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MTD3055EL www.VBsemi.tw N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) Max. ID (A) Qg (Typ.) 100 % Rg and UIS Tested 0.073 at VGS = 10 V 18.2 Material categorization 60 19.8 For definitions of compliance please see 0.085 at VGS = 4.5 V 13.2 TO-252 APPLICATIONS D DC/DC Converters DC/AC Inverters Moto

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTD3055VL/D Designer's Data Sheet MTD3055VL TMOS V Motorola Preferred Device Power Field Effect Transistor DPAK for Surface Mount TMOS POWER FET N Channel Enhancement Mode Silicon Gate 12 AMPERES 60 VOLTS TMOS V is a new technology designed to achieve an on resis- RDS(on) = 0.18 OHM tance area product about o

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTD3055VL/D Designer's Data Sheet MTD3055VL TMOS V Motorola Preferred Device Power Field Effect Transistor DPAK for Surface Mount TMOS POWER FET N Channel Enhancement Mode Silicon Gate 12 AMPERES 60 VOLTS TMOS V is a new technology designed to achieve an on resis- RDS(on) = 0.18 OHM tance area product about o

August 1999 DISTRIBUTION GROUP* MTD3055VL N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features DS(ON) GS

August 1999 MTD3055V* N-Channel Enhancement Mode Field Effect Transistor General Description Features 12 A, 60 V. RDS(ON) = 0.15 @ VGS = 10 V This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters Low gate charge. using either synchronous or conventional switching PWM controllers. Fast switching speed. These MOSFETs

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur