NCE3010S Todos los transistores

 ..1. Size:398K  ncepower
 nce3010s.pdf

Pb Free Product http //www.ncepower.com NCE3010S NCE N-Channel Enhancement Mode Power MOSFET Description The NCE3010S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =10A RDS(ON)

 ..2. Size:994K  cn vbsemi
 nce3010s.pdf

NCE3010S www.VBsemi.com N-Channel 20V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.012 at VGS = 10 V 12 20 6.1 nC Optimized for High-Side Synchronous 0.015 at VGS = 4.5 V 11 Rectifier Operation 100 % Rg Tested 100 % UIS Tested APPLICATIONS Notebook CPU Core - High-Side Switch S

 8.1. Size:388K  ncepower
 nce3018as.pdf

 8.2. Size:308K  ncepower
 nce3013j.pdf

http //www.ncepower.com NCE3013J NCE N-Channel Enhancement Mode Power MOSFET Description The NCE3013J uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =13A RDS(ON)

 8.3. Size:357K  ncepower
 nce3011e.pdf

Pb Free Product http //www.ncepower.com NCE3011E NCE N-Channel Enhancement Mode Power MOSFET Description The NCE3011E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications.It is ESD protested. Schematic diagram General Features

 8.4. Size:296K  ncepower
 nce3015s.pdf

http //www.ncepower.com NCE3015S NCE N-Channel Enhancement Mode Power MOSFET Description The NCE3015S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =15A Schematic diagram RDS(ON)