NCE60P25K Todos los transistores

 ..1. Size:397K  ncepower
 nce60p25k.pdf

Pb Free Product http //www.ncepower.com NCE60P25K NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P25K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features VDS =-60V,ID =-25A RDS(ON)

 ..2. Size:805K  cn vbsemi
 nce60p25k.pdf

NCE60P25K www.VBsemi.tw P-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ) Definition 0.053 at VGS = - 10 V - 25 TrenchFET Power MOSFET - 60 26 0.062 at VGS = - 4.5 V - 20 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS High Side Switch for Full Bri

 6.1. Size:358K  ncepower
 nce60p25.pdf

Pb Free Product http //www.ncepower.com NCE60P25 NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P25 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features VDS =-60V,ID =-25A RDS(ON)

 7.1. Size:347K  ncepower
 nce60p20k.pdf

http //www.ncepower.com NCE60P20K NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P20K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-60V,ID =-20A RDS(ON)

 7.2. Size:383K  ncepower
 nce60p28ak.pdf

NCE60P28AK http //www.ncepower.com NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P28AK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features VDS =-60V,ID =-28A RDS(ON)