FDB035AN06A0 Todos los transistores

 ..1. Size:236K  fairchild semi
 fdb035an06a0.pdf

July 2002 FDB035AN06A0 N-Channel PowerTrench MOSFET 60V, 80A, 3.5m Features Applications rDS(ON) = 3.2m (Typ.), VGS = 10V, ID = 80A Motor / Body Load Control Qg(tot) = 95nC (Typ.), VGS = 10V ABS Systems Low Miller Charge Powertrain Management Low Qrr Body Diode Injection Systems UIS Capability (Single Pulse and Repetitive Pulse) DC-DC co

 ..2. Size:948K  onsemi
 fdb035an06a0.pdf

FDB035AN06A0 N-Channel PowerTrench MOSFET 60 V, 80 A, 3.5 m Features Applications RDS(on) = 3.2 m ( Typ.) @ VGS = 10 V, ID = 80 A QG(tot) = 95 nC ( Typ.) @ VGS = 10 V Synchronous Rectification for ATX / Server / Telecom PSU Battery Protection Circuit Low Miller Charge Motor drives and Uninterruptible Power Supplies Low Qrr Body Diode UIS Capabil

 ..3. Size:205K  inchange semiconductor
 fdb035an06a0.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor FDB035AN06A0 FEATURES With TO-263(D2PAK) packaging Single pulse and repetitive pulse High speed switching Low miller charge Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operationz APPLICATIONS PFC stages, hard switching PWM stages and resonant swit

 4.1. Size:281K  fairchild semi
 fdb035an06 f085.pdf

January 2012 FDB035AN06A0_F085 N-Channel PowerTrench MOSFET 60V, 80A, 3.5m Features Applications rDS(ON) = 3.2m (Typ.), VGS = 10V, ID = 80A Motor / Body Load Control Qg(tot) = 95nC (Typ.), VGS = 10V ABS Systems Low Miller Charge Powertrain Management Low Qrr Body Diode Injection Systems UIS Capability (Single Pulse and Repetitive Pulse) D

 8.1. Size:562K  fairchild semi
 fdb035n10a.pdf

November 2013 FDB035N10A N-Channel PowerTrench MOSFET 100 V, 214 A, 3.5 m Features Description RDS(on) = 3.0 m ( Typ.) @ VGS = 10 V, ID = 75 A This N-Channel MOSFET is produced using Fairchild Semiconductor s advance PowerTrench process that has Fast Switching Speed been tailored to minimize the on-state resistance while main- taining superior switching performance.

 9.1. Size:538K  fairchild semi
 fdb039n06.pdf

July 2009 FDB039N06 N-Channel PowerTrench MOSFET 60V, 174A, 3.9m Features General Description RDS(on) = 2.95m ( Typ.) @ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process that has been Fast Switching Speed especially tailored to minimize the on-state resistance and yet maintain superior switching perfor

 9.2. Size:722K  fairchild semi
 fdb031n08.pdf

July 2008 FDB031N08 tm N-Channel PowerTrench MOSFET 75V, 235A, 3.1m Features Description RDS(on) = 2.4m ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semicon- ductor s adcanced PowerTrench process that has been espe- Fast switching speed cially tailored to minimize the on-state resistance and yet Low gate charge maintain superi

 9.3. Size:401K  onsemi
 fdb0300n1007l.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur