PHD78NQ03L MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

PHD78NQ03L datasheet

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PHD78NQ03L www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU 0.005 at VGS = 10 V 80 30 31 nC 0.006 at VGS = 4.5 V 68 APPLICATIONS D OR-ing TO-252 Server DC/DC G G D S Top View S N-Channel MOSFET ABSO

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PHD78NQ03LT N-channel TrenchMOS logic level FET Rev. 06 11 June 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features a

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PHU/PHD78NQ03LT N-channel TrenchMOS logic level FET Rev. 05 27 July 2005 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. 1.2 Features Logic level threshold Fast switching 1.3 Applications Computer motherboards DC-to-DC converters 1.4 Quick referenc

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