SI1555DL-T1 Todos los transistores

 

SI1555DL-T1 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SI1555DL-T1

Tipo de FET: MOSFET

Polaridad de transistor: NP

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.17 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 3.03 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 22 nS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.090 typ Ohm

Encapsulados: SC70-6

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SI1555DL-T1 datasheet

 ..1. Size:889K  cn vbsemi
si1555dl-t1.pdf pdf_icon

SI1555DL-T1

SI1555DL-T1 www.VBsemi.tw N- and P- Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.090 at VGS = 4.5 V 3.28 TrenchFET Power MOSFETs 1.8 V Rated N-Channel 20 0.110 at VGS = 2.5 V 2.13 Thermally Enhanced SC-70 Package 0.130 at VGS = 1.8 V 1.50 Fast Switching 0.155 at VGS = - 4.5 V

 6.1. Size:233K  vishay
si1555dl.pdf pdf_icon

SI1555DL-T1

Si1555DL Vishay Siliconix Complementary Low-Threshold MOSFET Pair FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.385 at VGS = 4.5 V 0.70 TrenchFET Power MOSFET N-Channel 20 0.630 at VGS = 2.5 V 0.54 Compliant to RoHS Directive 2002/95/EC 0.600 at VGS = - 4.5 V - 0.60 0.850 at VGS = - 2.5 V - 0.50 P-Cha

 9.1. Size:258K  vishay
si1553cdl.pdf pdf_icon

SI1555DL-T1

Si1553CDL Vishay Siliconix N- and P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.390 at VGS = 4.5 V 0.7 TrenchFET Power MOSFET N-Channel 20 0.510 at VGS = 2.7 V 0.5 0.55 100 % Rg Tested 0.578 at VGS = 2.5 V 0.5 Compliant to RoHS Directive 2002/95/EC 0.850 at VGS

 9.2. Size:269K  vishay
si1557dh.pdf pdf_icon

SI1555DL-T1

Si1557DH Vishay Siliconix N- and P-Channel 1.8 V (G-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.235 at VGS = 4.5 V 1.3 TrenchFET Power MOSFETs 0.280 at VGS = 2.5 V N-Channel 12 1.2 Thermally Enhanced SC-70 Package 0.340 at VGS = 1.8 V 1.0 Fast Switching to Minimize Gate and Switchin

Otros transistores... RFD15P05SM , RFP6P08 , RJK0822SPN , RRS130N03 , RSS100N03T , SDM4953A , SI1539CDL-T1 , SI1553CDL-T1-GE3 , IRFZ44 , SI1967DH-T1-GE3 , SI2300BDS-T1-GE3 , SI2300DS-T1-GE3 , SI2301ADS-T1 , SI2301BDS-T1-GE3 , SI2301CDS-T1 , SI2301DS-T1-GE3 , SI2302CDS-T1-GE3 .

History: RU20P7C | KO3415 | UT2302G-AE3 | SM2501NSU | KI4435DY | FDU6644

 

 

 

 

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