STU407D MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

S T U407DS amHop Microelectronics C orp. J uly 27 2006 ver1.1Dual E nhancement Mode Field E ffect Transistor ( N and P Channel)(N-C hannel) (PP R ODUC T S UMMAR Y P R ODUC T S UMMAR Y -C hannel)V DS S ID R DS (ON) ( m W ) Max V DS S ID R DS (ON) ( m W ) Max30 @ VG S = 10V 48 @ V G S = -10V-40V -12A40V 16A40 @ V G S = 4.5V 65 @ V G S = -4.5VD1 D2 D1/D2G 1 G 2 S 1G

GreenProductS TU407DHS amHop Microelectronics C orp.Apr 20 2007Dual E nhancement Mode Field Effect Transistor ( N and P Channel)(N-C hannel) (PPR ODUC T S UMMAR Y PR ODUC T S UMMAR Y -C hannel)VDS S ID R DS (ON) ( m ) Max VDS S ID R DS (ON) ( m ) Max29 @ VG S = 10V 47 @ VG S = -10V-40V -12A40V 16A39 @ VG S = 4.5V 64 @ VG S = -4.5VD1 D2D1/D2G 1G 2S 1G1

STD40N2LH5STU40N2LH5N-channel 25 V, 0.01 , 40 A, DPAK, IPAKSTripFET V Power MOSFETFeaturesType VDSS RDS(on) max IDSTD40N2LH5 25 V 0.0118 40 A STU40N2LH5 25 V 0.0124 40 A332 RDS(on) * Qg industry benchmark11 Extremely low on-resistance RDS(on)DPAKIPAK Very low switching gate charge High avalanche ruggedness Low gate drive power l

GreenProductSTU408DaS mHop Microelectronics C orp.Ver 1.1Dual Enhancement Mode Field Effect Transistor (N and P Channel)PRODUCT SUMMARY (N-Channel) PRODUCT SUMMARY (P-Channel)RDS(ON) (m) Max RDS(ON) (m) MaxVDSS ID VDSS ID27 @ VGS=10V 37 @ VGS=-10V40V 14A-40V -12A41 @ VGS=4.5V 60 @ VGS=-4.5VD1 D2D1/D2G 1G 2S 1G1S 2G2 S 1 N-ch S 2 P-chTO-252-4L(

GreenProductSTU404DSamHop Microelectronics Corp.Sep 14 2006 ver1.1Dual Enhancement Mode Field Effect Transistor ( N and P Channel)(N-Channel) (P-Channel)PRODUCT SUMMARY PRODUCT SUMMARYVDSS ID RDS(ON) ( m ) Max VDSS ID RDS(ON) ( m ) Max30 @ VGS = 10V 48 @ VGS = -10V-40V -12A40V 16A40 @ VGS = 4.5V 65 @ VGS = -4.5VD2D1D1/D2S1G2G1G1S2S2S1 P-chN-

S T U402DS amHop Microelectronics C orp. MAY .03 2006Dual N-C hannel E nhancement Mode Field E ffect TransistorP R ODUC T S UMMAR Y F E AT UR E SS uper high dense cell design for low R DS (ON).V DS S ID R DS (ON) ( m W ) MaxR ugged and reliable.30 @ V G S = 10V40V 16ATO252-4L package.40 @ V G S =4.5VD2D1D1/D2S 1G2G1TO-252-4LG1 S 2 S 2S 1 N-chN-chG2

GreenProductS TU409DHS amHop Microelectronics C orp.Dec,21,2009 Ver1.1Dual E nhancement Mode Field Effect Transistor ( N and P Channel)(N-C hannel) (PPR ODUC T S UMMAR Y PR ODUC T S UMMAR Y -C hannel)VDS S ID R DS (ON) ( m ) Max VDS S ID R DS (ON) ( m ) Max24 @ VG S = 10V 35 @ VG S = -10V40V 18A-40V -14A30 @ VG S = 4.5V 50 @ VG S = -4.5VD1 D2D1/D2G 1G 2

GreenProductS TU405DHS amHop Microelectronics C orp.Nov,20 2007 ver1.0Dual E nhancement Mode Field Effect Transistor ( N and P Channel)(N-C hannel) (PPR ODUC T S UMMAR Y PR ODUC T S UMMAR Y -C hannel)VDS S ID R DS (ON) ( m ) Max VDS S ID R DS (ON) ( m ) Max33 @ VG S = 10V 45 @ VG S = -10V-40V - 9A40V 11A45 @ VG S = 4.5V 65 @ VG S = -4.5VD2D1D1/D2S 1G2

GrerrPPrPrProSTU/D40N01aS mHop Microelectronics C orp.Ver 1.0N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).RDS(ON) (m) TypVDSS IDRugged and reliable.100V 40A 18 @ VGS=10VTO-252 and TO-251 Package.GGSSSTU SERIESSTD SERIES( )TO - 252AA D- PAK ( )TO - 251 I