SI2302DS-T1-GE3 Todos los transistores

 

SI2302DS-T1-GE3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SI2302DS-T1-GE3
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 1.25 W
   Voltaje máximo drenador - fuente |Vds|: 20 V
   Voltaje máximo fuente - puerta |Vgs|: 12 V
   Corriente continua de drenaje |Id|: 5 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 1 V
   Carga de la puerta (Qg): 12 nC
   Tiempo de subida (tr): 17 nS
   Conductancia de drenaje-sustrato (Cd): 105 pF
   Resistencia entre drenaje y fuente RDS(on): 0.028(typ) Ohm
   Paquete / Cubierta: SOT23

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SI2302DS-T1-GE3 Datasheet (PDF)

 0.1. Size:876K  cn vbsemi
si2302ds-t1-ge3.pdf

SI2302DS-T1-GE3
SI2302DS-T1-GE3

SI2302DS-T1-GE3www.VBsemi.twN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)e Qg (Typ.)Definition0.028 at VGS = 4.5 V TrenchFET Power MOSFET6a 100 % Rg Tested20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC0.050 at VGS = 1.8 V 5.6APPLICATIONS DC/D

 5.1. Size:1471K  kexin
si2302ds-3.pdf

SI2302DS-T1-GE3
SI2302DS-T1-GE3

SMD Type MOSFETN-Channel Enhancement MOSFETSI2302DS (KI2302DS)SOT-23-3Unit: mm+0.22.9 -0.1+0.10.4-0.13 Features VDS=20V RDS(on)= 85m@VGS=4.5V ,ID=3.6A RDS(on)= 115m@VGS=2.5V ,ID=3.1A 1 2+0.02+0.10.15 -0.020.95 -0.1+0.11.9 -0.2G 13 D1. GateS 22. Source3. Drain Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Un

 6.1. Size:257K  philips
si2302ds.pdf

SI2302DS-T1-GE3
SI2302DS-T1-GE3

SI2302DSN-channel enhancement mode field-effect transistorRev. 02 20 November 2001 Product dataM3D0881. DescriptionN-channel enhancement mode field-effect transistor in a plastic package usingTrenchMOS1 technology.Product availability:SI2302DS in SOT23.2. Features TrenchMOS technology Very fast switching Logic level compatible Subminiature surface mount packa

 6.2. Size:64K  vishay
si2302ds.pdf

SI2302DS-T1-GE3
SI2302DS-T1-GE3

Si2302DSVishay SiliconixN-Channel 1.25-W, 2.5-V MOSFETPRODUCT SUMMARYVDS (V) rDS(on) (W) ID (A)0.085 @ VGS = 4.5 V 2.820200.115 @ VGS = 2.5 V 2.4TO-236(SOT-23)G 13 DS 2Top ViewSi2302DS (A2)**Marking CodeABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)Parameter Symbol Limit UnitDrain-Source Voltage VDS 20VVGate-Source Voltage VGS "8TA= 25_

 6.3. Size:1142K  kexin
si2302ds.pdf

SI2302DS-T1-GE3
SI2302DS-T1-GE3

SMD Type MOSFETN-Channel Enhancement MOSFETSI2302DS (KI2302DS)SOT-23Unit: mm+0.12.9 -0.10.4+0.1-0.1 Features3 VDS=20V RDS(on)= 85m@VGS=4.5V ,ID=3.6A RDS(on)= 115m@VGS=2.5V ,ID=3.1A1 2+0.1+0.050.95 -0.1 0.1-0.01+0.11.9 -0.1G 11.Gate3 D2.SourceS 23.Drain Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Dr

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