SI2335DS-T1 Todos los transistores

SI2335DS-T1 www.VBsemi.tw P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg Tested VDS (V) RDS(on) ( ) Typ. ID (A)a Qg (Typ.) 0.046 at VGS = - 10 V - 5.6 0.049 at VGS = - 6 V - 5 11.4 nC - 30 APPLICATIONS 0.054 at VGS = - 4.5 V -4.5 For Mobile Computing - Load Switch - Notebook Adaptor Switch S TO-236 - DC/DC Converter (SOT

SMD Type MOSFET P-Channel Enhancement MOSFET SI2335DS (KI2335DS) SOT-23-3 Unit mm +0.2 2.9 -0.1 +0.1 Features 0.4-0.1 3 VDS (V) =-12V ID =-4.0A (VGS =-4.5V) RDS(ON) 51m (VGS =-4.5V) 1 2 RDS(ON) 70m (VGS =-2.5V) +0.02 +0.1 0.15 -0.02 0.95 -0.1 +0.1 RDS(ON) 106m (VGS =-1.8V) 1.9 -0.2 G 1 3 D 1. Gate S 2 2. Source 3. Drai

Si2335DS Vishay Siliconix P-Channel 12-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Available 0.051 at VGS = - 4.5 V - 4.0 TrenchFET Power MOSFETs 1.8 V Rated 0.070 at VGS = - 2.5 V - 12 - 3.5 0.106 at VGS = - 1.8 V - 3.0 TO-236 (SOT-23) G 1 3 D S 2 Top View Si2335DS (E5)* *Marking Code Orde

SMD Type MOSFET P-Channel Enhancement MOSFET SI2335DS (KI2335DS) SOT-23 Unit mm +0.1 Features 2.9-0.1 +0.1 0.4 -0.1 VDS (V) =-12V 3 ID =-4.0A (VGS =-4.5V) RDS(ON) 51m (VGS =-4.5V) RDS(ON) 70m (VGS =-2.5V) 1 2 +0.1 0.95-0.1 RDS(ON) 106m (VGS =-1.8V) 0.1+0.05 -0.01 1.9+0.1 -0.1 G 1 1.Gate 3 D 2.Source S 2 3.Drain Abso