SI2342DS-T1 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SI2342DS-T1
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 1.25 W
Voltaje máximo drenador - fuente |Vds|: 20 V
Voltaje máximo fuente - puerta |Vgs|: 12 V
Corriente continua de drenaje |Id|: 5 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 1 V
Carga de la puerta (Qg): 12 nC
Tiempo de subida (tr): 17 nS
Conductancia de drenaje-sustrato (Cd): 105 pF
Resistencia entre drenaje y fuente RDS(on): 0.028(typ) Ohm
Paquete / Cubierta: SOT23
Búsqueda de reemplazo de MOSFET SI2342DS-T1
SI2342DS-T1 Datasheet (PDF)
si2342ds-t1.pdf
Si2342DS-T1www.VBsemi.twN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)e Qg (Typ.)Definition0.028 at VGS = 4.5 V TrenchFET Power MOSFET6a 100 % Rg Tested20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC0.050 at VGS = 1.8 V 5.6APPLICATIONS DC/DC Co
si2342ds.pdf
New ProductSi2342DSVishay SiliconixN-Channel 8 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) RDS(on) ()ID (A)a, e Qg (Typ.) TrenchFET Power MOSFET0.017 at VGS = 4.5 V 6 Low On-Resistance0.020 at VGS = 2.5 V 6 100 % Rg Tested0.022 at VGS = 1.8 V 8 6 nC6 Compliant to RoHS Directive
si2343cds.pdf
Si2343CDSVishay SiliconixP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a, e Qg (Typ.)Definition TrenchFET Power MOSFET0.045 at VGS = - 10 V - 5.9- 30 7 nC 100 % Rg Tested0.075 at VGS = - 4.5 V - 4.6 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Load Switch Not
si2343ds.pdf
Si2343DSVishay SiliconixP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Available0.053 at VGS = - 10 V - 4.0 TrenchFET Power MOSFET - 300.086 at VGS = - 4.5 V - 3.1APPLICATIONS Load Switch PA SwitchTO-236(SOT-23)G 13 DS 2Top ViewSi2343DS (F3)** Marking CodeO
si2341.pdf
Shenzhen Tuofeng Semiconductor Technology Co., LtdSi2341P-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARYD TrenchFETr Power MOSFETSVDS (V) rDS(on) (W) ID (A)bAPPLICATIONS0.072 @ VGS = -10 V -2.8D Load Switch-3030D PA Switch0.120 @ VGS = - 4.5 V -2.0TO-236(SOT-23)G 13 DOrdering Information: Si2341S 2Top ViewABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTH
si2347ds.pdf
Si2347DSVishay SiliconixP-Channel 30 V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Max.ID (A)a Qg (Typ.) 100 % Rg Tested Material categorization:0.042 at VGS = - 10 V - 5For definitions of compliance please see- 30 0.054 at VGS = - 6 V - 4.4 6.9 nCwww.vishay.com/doc?999120.068 at VGS = - 4.5 V - 3.9APPLICATI
si2341ds.pdf
Si2341DSVishay SiliconixP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)bDefinition0.072 at VGS = - 10 V - 2.8 TrenchFET Power MOSFETS - 30 Compliant to RoHS Directive 2002/95/EC0.120 at VGS = - 4.5 V - 2.0APPLICATIONS Load Switch PA SwitchTO-236(SOT-23)G 13 DS 2T
si2341ds-3.pdf
SMD Type MOSFETP-Channel Enhancement MOSFET SI2341DS (KI2341DS)SOT-23-3Unit: mm+0.22.9 -0.1+0.10.4 -0.1 Features3 VDS (V) =-30V ID =-2.8A (VGS =-10V) RDS(ON) 72m (VGS =-10V)1 2+0.02 RDS(ON) 120m (VGS =-4.5V) +0.10.15 -0.020.95-0.1+0.11.9 -0.2G 13 D1. Gate2. SourceS 23. Drain Absolute Maximum Ratings Ta = 25
si2343ds.pdf
SMD Type MOSFETP-Channel MOSFET SI2343DS (KI2343DS)SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features VDS (V) =-30V ID =-4 A (VGS =-10V)1 2 RDS(ON) 53m (VGS =-10V)+0.1+0.050.95 -0.1 0.1 -0.01 RDS(ON) 86m (VGS =-4.5V)+0.11.9 -0.1G 13 D1. Gate2. SourceS 23. Drain Absolute Maximum Ratings Ta = 25Parameter Sym
si2343ds-3.pdf
SMD Type MOSFETP-Channel MOSFET SI2343DS (KI2343DS)SOT-23-3Unit: mm+0.22.9 -0.1+0.10.4-0.1 Features3 VDS (V) =-30V ID =-4 A (VGS =-10V) RDS(ON) 53m (VGS =-10V)1 2+0.02+0.10.15 -0.020.95 -0.1 RDS(ON) 86m (VGS =-4.5V)+0.11.9 -0.2G 13 D 1. Gate2. SourceS 23. Drain Absolute Maximum Ratings Ta = 25Parameter
si2345ds.pdf
SMD Type MOSFETP-Channel Enhancement MOSFET(KI2345DS)SI2345DSSOT-23-3Unit: mm+0.22.9 -0.1 Features+0.10.4 -0.1 VDS (V) =-30V 3 ID =-4.2 A (VGS =-10V) RDS(ON) 50m (VGS =-10V) RDS(ON) 65m (VGS =-4.5V) 12D+0.02+0.10.15 -0.020.95-0.1 RDS(ON) 120m (VGS =-2.5V)+0.11.9 -0.2G1. GateS2. Source3. Drain Absolute Maximum Ratings Ta = 25 Parameter
si2341ds.pdf
SMD Type MOSFETP-Channel Enhancement MOSFET SI2341DS (KI2341DS)SOT-23Unit: mm+0.12.9 -0.10.4+0.1 Features -0.13 VDS (V) =-30V ID =-2.8A (VGS =-10V) RDS(ON) 72m (VGS =-10V)1 2 RDS(ON) 120m (VGS =-4.5V)+0.1+0.050.95 -0.1 0.1-0.01+0.11.9-0.1G 11.Gate3 D2.SourceS 23.Drain Absolute Maximum Ratings Ta = 25Param
si2347ds.pdf
SI2347DSwww.VBsemi.twP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg TestedVDS (V) RDS(on) () Typ.ID (A)a Qg (Typ.)0.046 at VGS = - 10 V - 5.60.049 at VGS = - 6 V - 5 11.4 nC- 30APPLICATIONS0.054 at VGS = - 4.5 V -4.5 For Mobile Computing- Load Switch- Notebook Adaptor SwitchSTO-236- DC/DC Converter(SOT-23
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