SI4435BDY Todos los transistores

 ..1. Size:224K  vishay
 si4435bdy.pdf

Si4435BDY Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.020 at VGS = - 10 V - 9.1 TrenchFET Power MOSFET - 30 0.035 at VGS = - 4.5 V Advanced High Cell Density Process - 6.9 Compliant to RoHS Directive 2002/95/EC APPLICATIONS Load Switches B

 ..2. Size:1433K  cn vbsemi
 si4435bdy.pdf

SI4435BDY www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition 0.018 at VGS = - 10 V - 9.0 TrenchFET Power MOSFET - 30 13 nC 100 % Rg Tested 0.024 at VGS = - 4.5 V - 7.8 APPLICATIONS Load Switch Battery Switch S SO-8 S 1 8 D G S D 2 7 S 3 6 D

 8.1. Size:85K  international rectifier
 si4435dy.pdf

PD- 93768A Si4435DY HEXFET Power MOSFET Ultra Low On-Resistance A 1 8 S D P-Channel MOSFET VDSS = -30V 2 7 Surface Mount S D Available in Tape & Reel 3 6 S D 4 5 G D RDS(on) = 0.020 Top View Description These P-channel HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon

 8.2. Size:93K  fairchild semi
 si4435dy.pdf

October 2001 SI4435DY 30V P-Channel PowerTrench MOSFET General Description Features This P MOSFET is a rugged gate version of -Channel 8.8 A, 30 V R = 20 m @ V = 10 V DS(ON) GS Fairchild Semiconductor s advanced PowerTrench R = 35 m @ V = 4.5 V DS(ON) GS process. It has been optimized for power management applications requiring a wide range of gave

 8.3. Size:80K  vishay
 si4435dytr.pdf

PD- 93768A Si4435DY HEXFET Power MOSFET Ultra Low On-Resistance A 1 8 S D P-Channel MOSFET VDSS = -30V 2 7 Surface Mount S D Available in Tape & Reel 3 6 S D 4 5 G D RDS(on) = 0.020 Top View Description These P-channel HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon

 8.4. Size:273K  vishay
 si4435ddy.pdf

New Product Si4435DDY Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition TrenchFET Power MOSFET 0.024 at VGS = - 10 V - 11.4 - 30 15 nC Compliant to RoHS Directive 2002/95/EC 0.035 at VGS = - 4.5 V - 9.4 APPLICATIONS Load Switches Battery Swit

 8.5. Size:271K  vishay
 si4435dd.pdf

New Product Si4435DDY Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition TrenchFET Power MOSFET 0.024 at VGS = - 10 V - 11.4 - 30 15 nC Compliant to RoHS Directive 2002/95/EC 0.035 at VGS = - 4.5 V - 9.4 APPLICATIONS Load Switches Battery Swit

 8.6. Size:78K  vishay
 si4435dy.pdf

Si4435DY Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY D Lead (Pb)-Free Version is RoHS VDS (V) rDS(on) (W) ID (A) Compliant 0.02 @ VGS = 10 V 8.0 30 30 0.035 @ VGS = 4.5 V 6.0 S SO-8 SD 1 8 G S D 2 7 SD 3 6 G D 4 5 D Top View P-Channel MOSFET Ordering Information Si4435DY-T1 REV A Si4435DY-T1 A E3 (Lead (Pb)-Free) ABSOLU

 8.7. Size:107K  vishay
 si4435dypbf si4435dytrpbf.pdf

PD- 95133 Si4435DYPbF HEXFET Power MOSFET l Ultra Low On-Resistance A 1 8 S D l P-Channel MOSFET VDSS = -30V 2 7 l Surface Mount S D l Available in Tape & Reel 3 6 S D l Lead-Free 4 5 G D RDS(on) = 0.020 Top View Description These P-channel HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resis

 8.8. Size:186K  vishay
 si4435fdy.pdf

Si4435FDY www.vishay.com Vishay Siliconix P-Channel 30 V (D-S) MOSFET FEATURES SO-8 Single D TrenchFET Gen III p-channel power MOSFET D 5 D 6 100% Rg tested D 7 Material categorization 8 for definitions of compliance please see www.vishay.com/doc?99912 4 APPLICATIONS S G 3 3 Adapter switch S S 2 2 S S 1 1 Load switch S Top View DC

 8.9. Size:107K  infineon
 si4435dypbf.pdf

PD- 95133 Si4435DYPbF HEXFET Power MOSFET l Ultra Low On-Resistance A 1 8 S D l P-Channel MOSFET VDSS = -30V 2 7 l Surface Mount S D l Available in Tape & Reel 3 6 S D l Lead-Free 4 5 G D RDS(on) = 0.020 Top View Description These P-channel HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resis

 8.10. Size:464K  kexin
 si4435dy.pdf

SMD Type MOSFET SMD Type P-Channel MOSFET SI4435DY (KI4435DY) SOP-8 Features VDS=-30V RDS(on)=0.02 @VGS=-10V 1.50 0.15 RDS(on)=0.035 @VGS=-4.5V S S D 1 8 G S D 2 7 S D 3 6 G D 4 5 D Top View Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS 20 V Continuous Drain Current ID

 8.11. Size:464K  kexin
 si4435dy ki4435dy.pdf

SMD Type MOSFET SMD Type P-Channel MOSFET SI4435DY (KI4435DY) SOP-8 Features VDS=-30V RDS(on)=0.02 @VGS=-10V 1.50 0.15 RDS(on)=0.035 @VGS=-4.5V S S D 1 8 G S D 2 7 S D 3 6 G D 4 5 D Top View Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS 20 V Continuous Drain Current ID

 8.12. Size:830K  cn vbsemi
 si4435dy-t1-e3.pdf

SI4435DY-T1-E3 www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition 0.018 at VGS = - 10 V - 9.0 TrenchFET Power MOSFET - 30 13 nC 100 % Rg Tested 0.024 at VGS = - 4.5 V - 7.8 APPLICATIONS Load Switch Battery Switch S SO-8 S 1 8 D G S D 2 7 S 3