SI4435DY-T1-E3 Todos los transistores

 ..1. Size:830K  cn vbsemi
 si4435dy-t1-e3.pdf

SI4435DY-T1-E3 www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition 0.018 at VGS = - 10 V - 9.0 TrenchFET Power MOSFET - 30 13 nC 100 % Rg Tested 0.024 at VGS = - 4.5 V - 7.8 APPLICATIONS Load Switch Battery Switch S SO-8 S 1 8 D G S D 2 7 S 3

 6.1. Size:85K  international rectifier
 si4435dy.pdf

PD- 93768A Si4435DY HEXFET Power MOSFET Ultra Low On-Resistance A 1 8 S D P-Channel MOSFET VDSS = -30V 2 7 Surface Mount S D Available in Tape & Reel 3 6 S D 4 5 G D RDS(on) = 0.020 Top View Description These P-channel HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon

 6.2. Size:93K  fairchild semi
 si4435dy.pdf

October 2001 SI4435DY 30V P-Channel PowerTrench MOSFET General Description Features This P MOSFET is a rugged gate version of -Channel 8.8 A, 30 V R = 20 m @ V = 10 V DS(ON) GS Fairchild Semiconductor s advanced PowerTrench R = 35 m @ V = 4.5 V DS(ON) GS process. It has been optimized for power management applications requiring a wide range of gave

 6.3. Size:80K  vishay
 si4435dytr.pdf

PD- 93768A Si4435DY HEXFET Power MOSFET Ultra Low On-Resistance A 1 8 S D P-Channel MOSFET VDSS = -30V 2 7 Surface Mount S D Available in Tape & Reel 3 6 S D 4 5 G D RDS(on) = 0.020 Top View Description These P-channel HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon

 6.4. Size:78K  vishay
 si4435dy.pdf

Si4435DY Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY D Lead (Pb)-Free Version is RoHS VDS (V) rDS(on) (W) ID (A) Compliant 0.02 @ VGS = 10 V 8.0 30 30 0.035 @ VGS = 4.5 V 6.0 S SO-8 SD 1 8 G S D 2 7 SD 3 6 G D 4 5 D Top View P-Channel MOSFET Ordering Information Si4435DY-T1 REV A Si4435DY-T1 A E3 (Lead (Pb)-Free) ABSOLU

 6.5. Size:107K  vishay
 si4435dypbf si4435dytrpbf.pdf

PD- 95133 Si4435DYPbF HEXFET Power MOSFET l Ultra Low On-Resistance A 1 8 S D l P-Channel MOSFET VDSS = -30V 2 7 l Surface Mount S D l Available in Tape & Reel 3 6 S D l Lead-Free 4 5 G D RDS(on) = 0.020 Top View Description These P-channel HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resis

 6.6. Size:107K  infineon
 si4435dypbf.pdf

PD- 95133 Si4435DYPbF HEXFET Power MOSFET l Ultra Low On-Resistance A 1 8 S D l P-Channel MOSFET VDSS = -30V 2 7 l Surface Mount S D l Available in Tape & Reel 3 6 S D l Lead-Free 4 5 G D RDS(on) = 0.020 Top View Description These P-channel HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resis

 6.7. Size:464K  kexin
 si4435dy.pdf

SMD Type MOSFET SMD Type P-Channel MOSFET SI4435DY (KI4435DY) SOP-8 Features VDS=-30V RDS(on)=0.02 @VGS=-10V 1.50 0.15 RDS(on)=0.035 @VGS=-4.5V S S D 1 8 G S D 2 7 S D 3 6 G D 4 5 D Top View Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS 20 V Continuous Drain Current ID

 6.8. Size:464K  kexin
 si4435dy ki4435dy.pdf

SMD Type MOSFET SMD Type P-Channel MOSFET SI4435DY (KI4435DY) SOP-8 Features VDS=-30V RDS(on)=0.02 @VGS=-10V 1.50 0.15 RDS(on)=0.035 @VGS=-4.5V S S D 1 8 G S D 2 7 S D 3 6 G D 4 5 D Top View Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS 20 V Continuous Drain Current ID