SI4920DY-T1 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SI4920DY-T1
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 7.2 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.5 V
   Qgⓘ - Carga de la puerta: 14.5 nC
   trⓘ - Tiempo de subida: 45 nS
   Cossⓘ - Capacitancia de salida: 140 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.016(typ) Ohm
   Paquete / Cubierta: SO8

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SI4920DY-T1 Datasheet (PDF)

..1. Size:909K cn vbsemi
si4920dy-t1.pdf

SI4920DY-T1www.VBsemi.twDual N-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFETPower MOSFETVDS (V) RDS(on) ()ID (A)a Qg (Typ.) 100 % Rg Tested0.016 at VGS = 10 V 8.5 100 % UIS Tested30 7.1 Compliant to RoHS Directive 2002/95/EC0.020 at VGS = 4.5 V 7.6APPLICATIONS Notebook System Power Low Current DC/DCD 1 D 2

6.1. Size:216K vishay
si4920dy.pdf

Si4920DYVishay SiliconixDual N-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Definition0.025 at VGS = 10 V 6.9 TrenchFET Power MOSFETs 300.035 at VGS = 4.5 V 5.8 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECD1 D2SO-8S1 1 D18G1 2 D17S2 3 D26G1 G2

9.1. Size:240K vishay
si4925ddy.pdf

New ProductSi4925DDYVishay SiliconixDual P-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)d, e Qg (Typ.) TrenchFET Power MOSFET0.029 at VGS = - 10 V - 8 100 % UIS TestedRoHS- 30 15 nCCOMPLIANT0.041 at VGS = - 4.5 V - 8APPLICATIONS Load Switches- Notebook PCs- Desktop PCs- Game StationsS1 S2SO-

9.2. Size:237K vishay
si4925dd.pdf

9.3. Size:246K vishay
si4922bd.pdf

Si4922BDYVishay SiliconixDual N-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a, e Qg (Typ.)Definition0.016 at VGS = 10 V 8 TrenchFET Power MOSFET 100 % Rg and UIS tested30 0.018 at VGS = 4.5 V 8 19 Compliant to RoHS Directive 2002/95/EC0.024 at VGS = 2.5 V 8D1 D2SO-8 S D 1

9.4. Size:243K vishay
si4923dy.pdf

Si4923DYVishay SiliconixDual P-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Definition0.021 at VGS = - 10 V - 8.3 TrenchFET Power MOSFET- 300.031 at VGS = - 4.5 V - 6.8 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Load Switches- Notebook PCs- Desktop PCs- Game St

9.5. Size:246K vishay
si4925bdy.pdf

Si4925BDYVishay SiliconixDual P-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Definition0.025 at VGS = - 10 V - 7.1 TrenchFET Power MOSFET- 300.041 at VGS = - 4.5 V - 5.5 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Load Switches- Notebook PCs- Desktop PCs- Game S

9.6. Size:65K vishay
si4924dy.pdf

Si4924DYVishay SiliconixAsymetrical Dual N-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYVDS (V) rDS(on) (W) ID (A)0.022 @ VGS = 10 V 6.3Channel 1Channel-10.030 @ VGS = 4.5 V 5.430300.0105 @ VGS = 10 V 11.5Channel 2Channel-20.0145 @ VGS = 4.5 V 10D1 D2 D2 D2SO-8S1 1 D18G1 2 D27S2 3 D26G1 G2G2 4 D25Top ViewS1 S2Ordering Information: Si4924DYN-C

9.7. Size:72K vishay
si4925dy.pdf

Si4925DYVishay SiliconixDual P-Channel 30-V (D-S) MOSFETPRODUCT SUMMARY FEATURESD TrenchFETr Power MOSFETVDS (V) rDS(on) (W) ID (A)Pb-free0.032 @ VGS = -10 V -6.3Available-30300.045 @ VGS = -4.5 V -5.3SO-8S1 S2S1 1 D18G1 2 D17S2 3 D26 G1 G2G2 4 D25Top ViewD1 D2Ordering Information: Si4925DYSi4925DY-T1 (with Tape and Reel)P-Channel MOSFET P-Cha

9.8. Size:118K vishay
si4926dy.pdf

Si4926DYNew ProductVishay SiliconixAsymmetrical Dual N-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYVDS (V) rDS(on) (W) ID (A)0.022 @ VGS = 10 V 6.3Channel-1Channel-10.030 @ VGS = 4.5 V 5.43030300.0125 @ VGS = 10 V 10.5Channel-2Channel-20.017 @ VGS = 4.5 V 9.0D1 D2 D2 D2SO-8S1 1 D18G1 2 D27G1 G2S2 3 D26G2 4 D25S1 S2Top ViewN-Channel 1 N-Cha

9.9. Size:58K vishay
si4927dy.pdf

Si4927DYVishay SiliconixP-Channel 30-V (D-S) Battery SwitchPRODUCT SUMMARYVDS (V) rDS(on) (W) ID (A)0.028 @ VGS = 10 V "7.430300.045 @ VGS = 4.5 V "5.8S1 S2SO-8S1 1 D8G1 G2G1 2 D7S2 3 D6G2 4 D5Top ViewD1 D1 D2 D2P-Channel MOSFET P-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)Parameter Symbol Limit UnitDrai

9.10. Size:89K vishay
si4925dy 2.pdf

9.11. Size:56K vishay
si4922dy.pdf

Si4922DYNew ProductVishay SiliconixDual N-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYVDS (V) rDS(on) (W) ID (A)0.016 @ VGS = 10 V 8.830 0.018 @ VGS = 4.5 V 8.30.024 @ VGS = 2.5 V 7.2D1 D1D2 D2SO-8S1 1 D18G1 2 D17G1G2S2 3 D26G2 4 D25Top ViewS1S2N-Channel MOSFETN-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)Parameter

9.12. Size:179K vishay
si4922bdy.pdf

9.13. Size:1480K cn vbsemi
si4922bdy.pdf

SI4922BDYwww.VBsemi.twDual N-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFETPower MOSFETVDS (V) RDS(on) ()ID (A)a Qg (Typ.) 100 % Rg Tested0.016 at VGS = 10 V 8.5 100 % UIS Tested30 7.1 Compliant to RoHS Directive 2002/95/EC0.020 at VGS = 4.5 V 7.6APPLICATIONS Notebook System Power Low Current DC/DCD 1 D 2 SO

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