SI4944DY MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SI4944DY
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 2.1 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua
de drenaje: 10 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 12 nS
Cossⓘ - Capacitancia de salida: 175 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.010 typ Ohm
Encapsulados: SO8
Búsqueda de reemplazo de SI4944DY MOSFET
- Selecciónⓘ de transistores por parámetros
SI4944DY datasheet
..1. Size:222K vishay
si4944dy.pdf 
Si4944DY Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free Option Available VDS (V) RDS(on) ( )ID (A) TrenchFET Power MOSFET RoHS 0.0095 at VGS = 10 V 12.2 30 COMPLIANT 100 % Rg Tested 0.016 at VGS = 4.5 V 9.4 APPLICATIONS DC/DC Conversion Load Switching SO-8 D1 D2 S1 1 D1 8 G1 2 D1 7 S2 3 D2 6 G1
..2. Size:864K cn vbsemi
si4944dy.pdf
SI4944DY www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.010 at VGS = 10 V 12 30 5.9 nC Optimized for High-Side Synchronous 0.012 at VGS = 4.5 V 11 Rectifier Operation 100 % Rg Tested 100 % UIS Tested APPLICATIONS Notebook CPU Core - High-Side Switch S
9.1. Size:103K 1
si4947ady.pdf
Si4947ADY Vishay Siliconix Dual P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.080 at VGS = - 10 V - 3.9 TrenchFET Power MOSFETs - 30 0.135 at VGS = - 4.5 V - 3.0 Compliant to RoHS Directive 2002/95/EC S1 S2 SO-8 S1 1 D1 8 G1 G2 G1 2 D1 7 S2 3 D2 6 G2 4 D2 5 Top
9.2. Size:254K vishay
si4946be.pdf
Si4946BEY Vishay Siliconix Dual N-Channel 60-V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition 0.041 at VGS = 10 V 6.5 TrenchFET Power MOSFET 60 9.2 nC 0.052 at VGS = 4.5 V 5.8 175 C Maximum Junction Temperature 100 % Rg Tested Compliant to RoHS directive 2002/9
9.3. Size:237K vishay
si4942dy.pdf
Si4942DY Vishay Siliconix Dual N-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.021 at VGS = 10 V 7.4 TrenchFET Power MOSFET 40 0.028 at VGS = 4.5 V 6.4 Compliant to RoHS Directive 2002/95/EC APPLICATIONS Low Power Synchronous Rectifier Automotive 12 V Systems D1
9.4. Size:252K vishay
si4943cd.pdf
New Product Si4943CDY Vishay Siliconix Dual P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ.) Definition 0.0192 at VGS = - 10 V - 8 TrenchFET Power MOSFET - 20 20 100 % Rg and UIS Tested 0.0330 at VGS = - 4.5 V - 8 Compliant to RoHS Directive 2002/95/EC APPLICATIONS
9.5. Size:224K vishay
si4943bdy.pdf
Si4943BDY Vishay Siliconix Dual P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.019 at VGS = - 10 V - 8.4 TrenchFET Power MOSFET - 20 0.031 at VGS = - 4.5 V - 6.7 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Load Switching - Computer - G
9.6. Size:229K vishay
si4948bey.pdf
Si4948BEY Vishay Siliconix Dual P-Channel 60-V (D-S) 175 MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.120 at VGS = - 10 V - 3.1 - 60 TrenchFET Power MOSFET 0.150 at VGS = - 4.5 V - 2.8 Compliant to RoHS Directive 2002/95/EC S1 S2 SO-8 S1 1 D1 8 G1 G2 G1 2 D1 7 S2 3 D2 6 G2 4 D2 5
9.7. Size:216K vishay
si4948ey.pdf
Si4948EY Vishay Siliconix Dual P-Channel 60-V (D-S), 175 C MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.120 at VGS = - 10 V 3.1 - 60 TrenchFET Power MOSFETs 0.150 at VGS = - 4.5 V 2.8 175 C Maximum Junction Temperature Compliant to RoHS Directive 2002/95/EC S1 S2 SO-8 S1 1 D1
9.8. Size:70K vishay
si4946ey.pdf
Si4946EY Vishay Siliconix Dual N-Channel 60-V (D-S), 175_C MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFET VDS (V) rDS(on) (W) ID (A) D 175_C Maximum Junction Temperature D 100% Rg Tested 0.055 @ VGS = 10 V 4.5 Pb-free Available 60 60 0.075 @ VGS = 4.5 V 3.9 SO-8 D S1 1 D1 8 G1 2 D1 7 S2 3 D2 6 G G2 4 D2 5 Top View S Ordering Information Si4946EY Si4946EY-
9.9. Size:256K vishay
si4946bey.pdf
Si4946BEY Vishay Siliconix Dual N-Channel 60-V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition 0.041 at VGS = 10 V 6.5 TrenchFET Power MOSFET 60 9.2 nC 0.052 at VGS = 4.5 V 5.8 175 C Maximum Junction Temperature 100 % Rg Tested Compliant to RoHS directive 2002/9
9.10. Size:126K vishay
si4941edy.pdf
New Product Si4941EDY Vishay Siliconix Dual P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) rDS(on) ( )ID (A) Qg (Typ) ESD Protection 2500 V 0.021 at VGS = - 10 V - 10a RoHS - 30 26 nC COMPLIANT APPLICATIONS 0.031 at VGS = - 4.5 V - 10a Load Switch for Portable Devices Battery and Load Switching for Notebooks D1 D
9.11. Size:53K vishay
si4947dy.pdf
Si4947DY Dual P-Channel 30-V (D-S) Rated MOSFET Product Summary VDS (V) rDS(on) (W) ID (A) 0.085 @ VGS = 10 V "3.5 30 30 0.19 @ VGS = 4.5 V "2.5 S1 S2 SO-8 S1 1 8 D1 G1 G2 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 Top View D1 D2 P-Channel MOSFET P-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 3
9.12. Size:231K vishay
si4940dy.pdf
Si4940DY Vishay Siliconix Dual N-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.036 at VGS = 10 V 5.7 TrenchFET Power MOSFET 40 0.059 at VGS = 4.5 V 4.4 Compliant to RoHS Directive 2002/95/EC D1 D2 SO-8 S1 1 D1 8 G1 2 D1 7 G1 G2 S2 3 D2 6 G2 4 D2 5 Top View S1 S2
9.13. Size:47K vishay
si4943dy.pdf
Si4943DY New Product Vishay Siliconix Dual P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFET VDS (V) rDS(on) (W) ID (A) APPLICATIONS 0.019 @ VGS = -10 V -8.4 D Load Switching -20 -20 - Computer 0.030 @ VGS = - 4.5 V -6.7 - Game Systems D Battery Switching - 2-Cell Li-lon S1 S2 SO-8 S1 1 D1 8 G1 G2 G1 2 D1 7 S2 3 D2 6 G2 4 D2 5 Top View
9.14. Size:241K vishay
si4947ady.pdf
Si4947ADY Vishay Siliconix Dual P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.080 at VGS = - 10 V - 3.9 TrenchFET Power MOSFETs - 30 0.135 at VGS = - 4.5 V - 3.0 Compliant to RoHS Directive 2002/95/EC S1 S2 SO-8 S1 1 D1 8 G1 G2 G1 2 D1 7 S2 3 D2 6 G2 4 D2 5 Top
9.15. Size:226K vishay
si4948be.pdf
Si4948BEY Vishay Siliconix Dual P-Channel 60-V (D-S) 175 MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.120 at VGS = - 10 V - 3.1 - 60 TrenchFET Power MOSFET 0.150 at VGS = - 4.5 V - 2.8 Compliant to RoHS Directive 2002/95/EC S1 S2 SO-8 S1 1 D1 8 G1 G2 G1 2 D1 7 S2 3 D2 6 G2 4 D2 5
9.16. Size:225K vishay
si4946cdy.pdf
Si4946CDY www.vishay.com Vishay Siliconix Dual N-Channel 60 V (D-S) MOSFET FEATURES SO-8 Dual D2 TrenchFET power MOSFET D2 5 D1 6 100 % Rg tested D1 7 Material categorization 8 for definitions of compliance please see www.vishay.com/doc?99912 4 APPLICATIONS G2 3 3 S2 S2 2 2 DC/DC converter G1 D1 D2 G 1 1 Load switch S1 Top View Inve
9.17. Size:255K vishay
si4943cdy.pdf
New Product Si4943CDY Vishay Siliconix Dual P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ.) Definition 0.0192 at VGS = - 10 V - 8 TrenchFET Power MOSFET - 20 20 100 % Rg and UIS Tested 0.0330 at VGS = - 4.5 V - 8 Compliant to RoHS Directive 2002/95/EC APPLICATIONS
9.18. Size:1761K kexin
si4946dy.pdf
SMD Type MOSFET Dual N-Channel MOSFET SI4946DY (KI4946DY) SOP-8 Features VDS (V) = 60V 1.50 0.15 ID = 6.5 A (VGS = 10V) RDS(ON) 41m (VGS = 10V) RDS(ON) 52m (VGS = 4.5V) 1 Source1 5 Drain2 6 Drain2 2 Gate1 175 C Maximum Junction Temperature 7 Drain1 3 Source2 8 Drain1 4 Gate2 D1 D2 G1 G2 S1 S2 Absolute Maximum Ratings Ta = 25
9.19. Size:870K cn vbsemi
si4948bey-t1-e3.pdf
SI4948BEY-T1-E3 www.VBsemi.tw Dual P-Channel 6 0-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)d, e Qg (Typ.) TrenchFET Power MOSFET 0.059 at VGS = - 10 V - 5.3 100 % UIS Tested RoHS - 60 17 nC COMPLIANT 0.069 at VGS = - 4.5 V - 5.0 APPLICATIONS Load Switches S1 S2 SO-8 S1 1 D1 8 G1 G2 G1 2 D1 7 S2 3 D2 6 G2 4 D2 5
9.20. Size:947K cn vbsemi
si4946bey-t1.pdf
SI4946BEY-T1 www.VBsemi.tw Dual N-Channel 60 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) 60 100 % Rg and UIS tested RDS(on) ( ) at VGS = 10 V 0.040 RDS(on) ( ) at VGS = 4.5 V 0.055 ID (A) per leg 7 Configuration Dual SO-8 Dual D2 D1 D2 D2 5 D1 6 D1 7 8 G1 G2 4 G2 3 3 S1 S2 S2 S2 2 2 G G1 1 1 N-Channel MOSFET N-Cha
9.21. Size:915K cn vbsemi
si4947dy.pdf
SI4947DY www.VBsemi.tw Dual P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)d, e Qg (Typ.) TrenchFET Power MOSFET 0.029 at VGS = - 10 V - 7.3 100 % UIS Tested RoHS - 30 17 nC COMPLIANT 0.039 at VGS = - 4.5 V - 6.3 APPLICATIONS Load Switches S1 S2 SO-8 S1 1 D1 8 G1 G2 G1 2 D1 7 S2 3 D2 6 G2 4 D2 5 Top Vie
9.22. Size:1469K cn vbsemi
si4947ady.pdf
SI4947ADY www.VBsemi.tw Dual P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)d, e Qg (Typ.) TrenchFET Power MOSFET 0.029 at VGS = - 10 V - 7.3 100 % UIS Tested RoHS - 30 17 nC COMPLIANT 0.039 at VGS = - 4.5 V - 6.3 APPLICATIONS Load Switches S1 S2 SO-8 S1 1 D1 8 G1 G2 G1 2 D1 7 S2 3 D2 6 G2 4 D2 5 Top Vi
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History: STF7LN80K5
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