SM3113NSUC MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SM3113NSUC
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 235 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua
de drenaje: 100 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 11 nS
Cossⓘ - Capacitancia de salida: 1525 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.002 typ Ohm
Encapsulados: TO252
Búsqueda de reemplazo de SM3113NSUC MOSFET
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SM3113NSUC datasheet
..1. Size:1430K cn vbsemi
sm3113nsuc.pdf 
SM3113NSUC www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU 0.002 at VGS = 10 V 100 30 72 nC 0.003 at VGS = 4.5 V 90 APPLICATIONS D OR-ing Server TO-252 DC/DC G G D S Top View S N-Channel MOSFET AB
5.1. Size:261K sino
sm3113nsu.pdf 
SM3113NSU N-Channel Enhancement Mode MOSFET Features Pin Description 30V/85A, D RDS(ON)= 3m (Max.) @ VGS=10V S RDS(ON)= 4.6m (Max.) @ VGS=4.5V G Reliable and Rugged Lead Free and Green Devices Available Top View of TO-252-3 (RoHS Compliant) D Applications G Power Management in Desktop Computer or DC/DC Converters. S N-Channel MOSFET Ordering and Marking Informati
9.1. Size:173K sino
sm3117nsu.pdf 
SM3117NSU N-Channel Enhancement Mode MOSFET Features Pin Description 30V/50A, D RDS(ON)=7.2m (max.) @ VGS=10V S RDS(ON)=9.8m (max.) @ VGS=4.5V G Provide Excellent Qgd x Rds-on 100% UIS + Rg Tested Top View of TO-252-2 Reliable and Rugged D Lead Free and Green Devices Available (RoHS Compliant) G Applications Power Management in Desktop Computer or S
9.2. Size:551K sino
sm3119nau.pdf 
SM3119NAU N-Channel Enhancement Mode MOSFET Features Pin Description Drain 4 30V/50A, RDS(ON)=10.5m (max.) @ VGS=10V 3 Source 2 RDS(ON)=14.5m (max.) @ VGS=4.5V 1 Gate Super High Dense Cell Design Reliable and Rugged Top View of TO-252-3 Lead Free and Green Devices Available D (RoHS Compliant) Applications G Power Management in Desktop Computer or DC
9.3. Size:551K sino
sm3116nau.pdf 
SM3116NAU N-Channel Enhancement Mode MOSFET Features Pin Description 30V/60A, D RDS(ON)=5.7m (Max.) @ VGS=10V S RDS(ON)=9m (Max.) @ VGS=4.5V G Super High Dense Cell Design Reliable and Rugged Top View of TO-252-3 Lead Free and Green Devices Available D (RoHS Compliant) Applications G Power Management in Desktop Computer or DC/DC Converters. S N-Chann
9.4. Size:265K sino
sm3114nsu.pdf 
SM3114NSU N-Channel Enhancement Mode MOSFET Features Pin Description 30V/75A, D RDS(ON)=4.2m (Max.) @ VGS=10V S RDS(ON)=6m (Max.) @ VGS=4.5V G Reliable and Rugged Lead Free and Green Devices Available Top View of TO-252-3 (RoHS Compliant) D Applications G Power Management in Desktop Computer or DC/DC Converters. S N-Channel MOSFET Ordering and Marking Information
9.5. Size:149K sino
sm3116nsuc.pdf 
SM3116NSUC N-Channel Enhancement Mode MOSFET Features Pin Description 30V/60A, RDS(ON)=5.7m (Max.) @ VGS=10V RDS(ON)=8m (Max.) @ VGS=4.5V S D G Reliable and Rugged Lead Free and Green Devices Available Top View of TO-251S (RoHS Compliant) D 100% UIS + Rg Tested G Applications Power Management in Desktop Computer or S DC/DC Converters. N-Channel MOSFE
9.6. Size:160K sino
sm3116naf sm3116nafp.pdf 
SM3116NAF/SM3116NAFP N-Channel Enhancement Mode MOSFET Features Pin Description 30V/58A, RDS(ON)= 5.5m (Max.) @ VGS=10V RDS(ON)= 7.8m (Max.) @ VGS=4.5V S S Reliable and Rugged D D G G Lead Free and Green Devices Available Top View of TO-220FP Top View of TO-220 (RoHS Compliant) D 100% UIS + Rg Tested Applications G Power Management in Desktop Computer or
9.7. Size:265K sino
sm3116nbu.pdf 
SM3116NBU N-Channel Enhancement Mode MOSFET Features Pin Description 30V/60A, D RDS(ON)=5.7m (Max.) @ VGS=10V S RDS(ON)=9m (Max.) @ VGS=4.5V G Reliable and Rugged Lead Free and Green Devices Available Top View of TO-252-3 (RoHS Compliant) D Applications G Power Management in Desktop Computer or DC/DC Converters. S N-Channel MOSFET Ordering and Marking Information
9.8. Size:264K sino
sm3116nsu.pdf 
SM3116NSU N-Channel Enhancement Mode MOSFET Features Pin Description 30V/60A, D RDS(ON)=5.7m (Max.) @ VGS=10V S RDS(ON)=8m (Max.) @ VGS=4.5V Reliable and Rugged G Lead Free and Green Devices Available Top View of TO-252-3 (RoHS Compliant) D Applications G Power Management in Desktop Computer or DC/DC Converters. S N-Channel MOSFET Ordering and Marking Information
9.9. Size:261K sino
sm3114nau.pdf 
SM3114NAU N-Channel Enhancement Mode MOSFET Features Pin Description 30V/75A, Drain 4 RDS(ON)= 3.6m (Max.) @ VGS=10V 3 Source 2 RDS(ON)= 5.2m (Max.) @ VGS=4.5V 1 Gate Reliable and Rugged Lead Free and Green Devices Available Top View of TO-252-3 (RoHS Compliant) D Applications G Power Management in Desktop Computer or DC/DC Converters. S N-Channel MOSFET Order
9.10. Size:266K sino
sm3115nsu.pdf 
SM3115NSU N-Channel Enhancement Mode MOSFET Features Pin Description 30V/60A, D RDS(ON)=5.4m (Max.) @ VGS=10V S RDS(ON)=7.3m (Max.) @ VGS=4.5V G Reliable and Rugged Lead Free and Green Devices Available Top View of TO-252-3 (RoHS Compliant) D Applications G Power Management in Desktop Computer or DC/DC Converters. S N-Channel MOSFET Ordering and Marking Informati
9.11. Size:155K sino
sm3117nsuc.pdf 
SM3117NSUC N-Channel Enhancement Mode MOSFET Features Pin Description 30V/50A, RDS(ON)=7.2m (max.) @ VGS=10V S RDS(ON)=9.8m (max.) @ VGS=4.5V D G Provide Excellent Qgd x Rds-on Reliable and Rugged Top View of TO-251S Lead Free and Green Devices Available D (RoHS Compliant) 100% UIS + Rg Tested G Applications Power Management in Desktop Computer or S
9.12. Size:2124K huashuo
hsm3115.pdf 
HSM3115 P-Ch 30V Fast Switching MOSFETs Description Product Summary VDS -30 V The HSM3115 is the high cell density trenched P- ch MOSFETs, which provide excellent RDSON and RDS(ON),max 8.7 m gate charge for most of the synchronous buck converter applications. ID -14 A The HSM3115 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reli
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History: IXFM6N90
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