SM3113NSUC MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SM3113NSUC
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 235 W
Voltaje máximo drenador - fuente |Vds|: 30 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 100 A
Temperatura máxima de unión (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 2.5 V
Carga de la puerta (Qg): 151 nC
Tiempo de subida (tr): 11 nS
Conductancia de drenaje-sustrato (Cd): 1525 pF
Resistencia entre drenaje y fuente RDS(on): 0.002(typ) Ohm
Paquete / Cubierta: TO252
Búsqueda de reemplazo de MOSFET SM3113NSUC
SM3113NSUC Datasheet (PDF)
sm3113nsuc.pdf
SM3113NSUCwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.002 at VGS = 10 V 10030 72 nC0.003 at VGS = 4.5 V 90APPLICATIONSD OR-ing ServerTO-252 DC/DCGG D STop ViewSN-Channel MOSFETAB
sm3113nsu.pdf
SM3113NSU N-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/85A,D RDS(ON)= 3m (Max.) @ VGS=10VS RDS(ON)= 4.6m (Max.) @ VGS=4.5VG Reliable and Rugged Lead Free and Green Devices AvailableTop View of TO-252-3(RoHS Compliant)DApplicationsG Power Management in Desktop Computer or DC/DC Converters.SN-Channel MOSFETOrdering and Marking Informati
sm3117nsu.pdf
SM3117NSU N-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/50A,D RDS(ON)=7.2m (max.) @ VGS=10VS RDS(ON)=9.8m (max.) @ VGS=4.5VG Provide Excellent Qgd x Rds-on 100% UIS + Rg TestedTop View of TO-252-2 Reliable and RuggedD Lead Free and Green Devices Available(RoHS Compliant)GApplications Power Management in Desktop Computer orS
sm3119nau.pdf
SM3119NAU N-Channel Enhancement Mode MOSFETFeatures Pin DescriptionDrain 4 30V/50A, RDS(ON)=10.5m (max.) @ VGS=10V3Source2 RDS(ON)=14.5m (max.) @ VGS=4.5V1Gate Super High Dense Cell Design Reliable and RuggedTop View of TO-252-3 Lead Free and Green Devices AvailableD(RoHS Compliant)ApplicationsG Power Management in Desktop Computer or DC
sm3116nau.pdf
SM3116NAU N-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/60A,D RDS(ON)=5.7m (Max.) @ VGS=10VS RDS(ON)=9m (Max.) @ VGS=4.5VG Super High Dense Cell Design Reliable and RuggedTop View of TO-252-3 Lead Free and Green Devices AvailableD(RoHS Compliant)ApplicationsG Power Management in Desktop Computer or DC/DC Converters.SN-Chann
sm3114nsu.pdf
SM3114NSU N-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/75A,D RDS(ON)=4.2m (Max.) @ VGS=10VS RDS(ON)=6m (Max.) @ VGS=4.5VG Reliable and Rugged Lead Free and Green Devices AvailableTop View of TO-252-3(RoHS Compliant)DApplicationsG Power Management in Desktop Computer or DC/DC Converters.SN-Channel MOSFETOrdering and Marking Information
sm3116nsuc.pdf
SM3116NSUC N-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/60A, RDS(ON)=5.7m (Max.) @ VGS=10V RDS(ON)=8m (Max.) @ VGS=4.5V SDG Reliable and Rugged Lead Free and Green Devices AvailableTop View of TO-251S (RoHS Compliant)D 100% UIS + Rg TestedGApplications Power Management in Desktop Computer orS DC/DC Converters.N-Channel MOSFE
sm3116naf sm3116nafp.pdf
SM3116NAF/SM3116NAFP N-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/58A, RDS(ON)= 5.5m (Max.) @ VGS=10V RDS(ON)= 7.8m (Max.) @ VGS=4.5VS S Reliable and Rugged D DG G Lead Free and Green Devices AvailableTop View of TO-220FPTop View of TO-220(RoHS Compliant)D 100% UIS + Rg TestedApplicationsG Power Management in Desktop Computer or
sm3116nbu.pdf
SM3116NBU N-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/60A,D RDS(ON)=5.7m (Max.) @ VGS=10VS RDS(ON)=9m (Max.) @ VGS=4.5VG Reliable and Rugged Lead Free and Green Devices AvailableTop View of TO-252-3(RoHS Compliant)DApplicationsG Power Management in Desktop Computer or DC/DC Converters.SN-Channel MOSFETOrdering and Marking Information
sm3116nsu.pdf
SM3116NSU N-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/60A,D RDS(ON)=5.7m (Max.) @ VGS=10VS RDS(ON)=8m (Max.) @ VGS=4.5V Reliable and RuggedG Lead Free and Green Devices AvailableTop View of TO-252-3(RoHS Compliant)DApplicationsG Power Management in Desktop Computer or DC/DC Converters.SN-Channel MOSFETOrdering and Marking Information
sm3114nau.pdf
SM3114NAU N-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/75A,Drain 4 RDS(ON)= 3.6m (Max.) @ VGS=10V3Source2 RDS(ON)= 5.2m (Max.) @ VGS=4.5V1Gate Reliable and Rugged Lead Free and Green Devices AvailableTop View of TO-252-3(RoHS Compliant)DApplicationsG Power Management in Desktop Computer or DC/DC Converters.SN-Channel MOSFETOrder
sm3115nsu.pdf
SM3115NSU N-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/60A,D RDS(ON)=5.4m (Max.) @ VGS=10VS RDS(ON)=7.3m (Max.) @ VGS=4.5VG Reliable and Rugged Lead Free and Green Devices AvailableTop View of TO-252-3(RoHS Compliant)DApplicationsG Power Management in Desktop Computer or DC/DC Converters.SN-Channel MOSFETOrdering and Marking Informati
sm3117nsuc.pdf
SM3117NSUC N-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/50A, RDS(ON)=7.2m (max.) @ VGS=10VS RDS(ON)=9.8m (max.) @ VGS=4.5VDG Provide Excellent Qgd x Rds-on Reliable and RuggedTop View of TO-251S Lead Free and Green Devices AvailableD(RoHS Compliant) 100% UIS + Rg TestedGApplications Power Management in Desktop Computer orS
hsm3115.pdf
HSM3115 P-Ch 30V Fast Switching MOSFETs Description Product Summary VDS -30 V The HSM3115 is the high cell density trenched P-ch MOSFETs, which provide excellent RDSON and RDS(ON),max 8.7 m gate charge for most of the synchronous buck converter applications. ID -14 A The HSM3115 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reli
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