SM3113NSUC Todos los transistores

 

SM3113NSUC MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SM3113NSUC

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 235 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 100 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 11 nS

Cossⓘ - Capacitancia de salida: 1525 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.002 typ Ohm

Encapsulados: TO252

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SM3113NSUC datasheet

 ..1. Size:1430K  cn vbsemi
sm3113nsuc.pdf pdf_icon

SM3113NSUC

SM3113NSUC www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU 0.002 at VGS = 10 V 100 30 72 nC 0.003 at VGS = 4.5 V 90 APPLICATIONS D OR-ing Server TO-252 DC/DC G G D S Top View S N-Channel MOSFET AB

 5.1. Size:261K  sino
sm3113nsu.pdf pdf_icon

SM3113NSUC

SM3113NSU N-Channel Enhancement Mode MOSFET Features Pin Description 30V/85A, D RDS(ON)= 3m (Max.) @ VGS=10V S RDS(ON)= 4.6m (Max.) @ VGS=4.5V G Reliable and Rugged Lead Free and Green Devices Available Top View of TO-252-3 (RoHS Compliant) D Applications G Power Management in Desktop Computer or DC/DC Converters. S N-Channel MOSFET Ordering and Marking Informati

 9.1. Size:173K  sino
sm3117nsu.pdf pdf_icon

SM3113NSUC

SM3117NSU N-Channel Enhancement Mode MOSFET Features Pin Description 30V/50A, D RDS(ON)=7.2m (max.) @ VGS=10V S RDS(ON)=9.8m (max.) @ VGS=4.5V G Provide Excellent Qgd x Rds-on 100% UIS + Rg Tested Top View of TO-252-2 Reliable and Rugged D Lead Free and Green Devices Available (RoHS Compliant) G Applications Power Management in Desktop Computer or S

 9.2. Size:551K  sino
sm3119nau.pdf pdf_icon

SM3113NSUC

SM3119NAU N-Channel Enhancement Mode MOSFET Features Pin Description Drain 4 30V/50A, RDS(ON)=10.5m (max.) @ VGS=10V 3 Source 2 RDS(ON)=14.5m (max.) @ VGS=4.5V 1 Gate Super High Dense Cell Design Reliable and Rugged Top View of TO-252-3 Lead Free and Green Devices Available D (RoHS Compliant) Applications G Power Management in Desktop Computer or DC

Otros transistores... SI9410BDY-T1 , SI9933ADY , SI9948AEY-T1-E3 , SI9955DY , SIR422DP-T1-GE3 , SIR462DP-T1 , SIR802DP-T1-GE3 , SM2300NSAC , SI2302 , SM4028NSUC-TRG , SM4307PSKPC , SM4927BSKC , SM4953KC , SP8K1TB , SP8M3-TB , SPD09N05 , SPN2054T252RG .

History: IXFM6N90 | IRLR2908

 

 

 


History: IXFM6N90 | IRLR2908

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