SM4028NSUC-TRG Todos los transistores

 

SM4028NSUC-TRG MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SM4028NSUC-TRG
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 312 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
   |Id|ⓘ - Corriente continua de drenaje: 85 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 11 nS
   Cossⓘ - Capacitancia de salida: 550 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0064(typ) Ohm
   Paquete / Cubierta: TO252
 

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SM4028NSUC-TRG Datasheet (PDF)

 ..1. Size:835K  cn vbsemi
sm4028nsuc-trg.pdf pdf_icon

SM4028NSUC-TRG

SM4028NSUC-TRGwww.VBsemi.twN-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, c Qg (Typ.) 100 % Rg and UIS TestedRoHS0.0050 at VGS = 10 V 85 COMPLIANT 40 80 nC0.0065 at VGS = 4.5 V 70APPLICATIONS Synchronous Rectification Power SuppliesDTO-252 GG D S SN-Channel MOSFETABSOLUTE MAXI

 5.1. Size:172K  sino
sm4028nsu.pdf pdf_icon

SM4028NSUC-TRG

SM4028NSU N-Channel Enhancement Mode MOSFETFeatures Pin Description 40V/60A, D RDS(ON)=8m (Max.) @ VGS=10VS RDS(ON)=13m (Max.) @ VGS=4.5VG Reliable and Rugged Lead Free and Green Devices AvailableTop View of TO-252-3(RoHS Compliant)DApplicationsG Power Management in Desktop Computer or DC/DC Converters.SN-Channel MOSFETOrdering and Marking I

 6.1. Size:294K  sino
sm4028nskp.pdf pdf_icon

SM4028NSUC-TRG

SM4028NSKP N-Channel Enhancement Mode MOSFETFeatures Pin DescriptionD 40V/60A, DDD RDS(ON)= 9m (max.) @ VGS=10V RDS(ON)= 16m (max.) @ VGS=4.5VGPin 1S Reliable and RuggedSS Lead Free and Green Devices AvailableDFN5x6-8(RoHS Compliant)(5,6,7,8)D D DDApplications(4) G SMPS Synchronous Rectification Load Switch DC-DC Conversion S S S( 1, 2, 3 )

 9.1. Size:173K  sino
sm4027psu.pdf pdf_icon

SM4028NSUC-TRG

SM4027PSUP-Channel Enhancement Mode MOSFETFeatures Pin Description -40V/-74A,D RDS(ON)= 8m (max.) @ VGS=-20V RDS(ON)= 9.4m (max.) @ VGS=-10VS RDS(ON)= 15m (max.) @ VGS=-4.5VG HBM ESD capability level of 8KV typical 100% UIS + Rg TestedTop View of TO-252-2 Reliable and Rugged Lead Free and Green Devices Available (RoHSDCompliant)Note : The diode

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History: MMF60R280QTH | RU205C | HRLFS136N10P | WMM07N100C2 | IRFP7530 | FDP020N06B | R6047MNZ1

 

 
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