SM4953KC MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SM4953KC
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 7.3 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3 V
   Qgⓘ - Carga de la puerta: 32 nC
   trⓘ - Tiempo de subida: 8 nS
   Cossⓘ - Capacitancia de salida: 215 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.035(typ) Ohm
   Paquete / Cubierta: SO8

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SM4953KC Datasheet (PDF)

..1. Size:915K cn vbsemi
sm4953kc.pdf

SM4953KCwww.VBsemi.twDual P-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)d, e Qg (Typ.) TrenchFET Power MOSFET0.029 at VGS = - 10 V - 7.3 100 % UIS TestedRoHS- 30 17 nCCOMPLIANT0.039 at VGS = - 4.5 V - 6.3APPLICATIONS Load SwitchesS1 S2SO-8S1 1 D18G1 G2G1 2 D17S2 3 D26G2 4 D25Top Vie

7.1. Size:273K sino
sm4953k.pdf

SM4953KDual P-Channel Enhancement Mode MOSFETFeaturesPin DescriptionD1D1D2 -30V/-4.9A ,D2 RDS(ON)=53m (typ.) @ VGS=-10VRDS(ON)=80m (typ.) @ VGS=-4.5VS1G1 Reliable and RuggedS2G2 Lead Free and Green Device AvailableTop View of SOP-8(RoHS Compliant)D1 D1 D2 D2(8) (7) (6) (5)ApplicationsG1G2(2)(4) Power Management in Notebook Computer, Portable

8.1. Size:225K taiwansemi
tsm4953dcs.pdf

TSM4953D 30V Dual P-Channel MOSFET SOP-8 Pin Definition: PRODUCT SUMMARY 1. Source 1 8. Drain 1 2. Gate 1 7. Drain 1 VDS (V) RDS(on)(m) ID (A) 3. Source 2 6. Drain 2 60 @ VGS = 10V -4.9 4. Gate 2 5. Drain 2 -30 90 @ VGS = 4.5V -3.7 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application

8.2. Size:438K globaltech semi
gsm4953s.pdf

30V P-Channel Enhancement Mode MOSFET Product Description Features GSM4953S, P-Channel enhancement mode -30V/-5.4A,RDS(ON)=52m@VGS= -10V MOSFET, uses Advanced Trench Technology to -30V/-4.2A,RDS(ON)=76m@VGS= - 4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) volt

8.3. Size:944K globaltech semi
gsm4953ws.pdf

GSM4953WS GSM4953WS 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM4953WS, P-Channel enhancement mode -30V/-5.4A,RDS(ON)=60m@VGS=-10V MOSFET, uses Advanced Trench Technology to -30V/-4.2A,RDS(ON)=80m@VGS=-4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particula

8.4. Size:109K silicon standard
ssm4953m.pdf

SSM4953MP-CHANNEL ENHANCEMENT-MODE POWER MOSFETSSimple drive requirement BVDSS -30VD2D2Low on-resistance RDS(ON) 53m D1D1Fast switching I -5ADG2S2G1SO-8S1D2Description D1MOSFETs from Silicon Standard Corp. provide thedesigner with the best combination of fast switching,G2G1ruggedized device design, low on-resistance and cost-effectiveness.S2S1

8.5. Size:416K jsmsemi
jsm4953.pdf

JSM4953Dual P-Channel -30V(D-S) MOSFETV(BR)DSS RDS(on)MAX IDSOP-8 D2D20.059@-10V.D1-30V -5.3A D10.089@-4.5VG2GS2G1 SSS1SO-8 SPin 1Equivalent Cir cuitD1 D2 General FEATURETrenchFET Power MOSFETLead free product is acquiredSurface mount packageG1 G2 S1 S2 MARKINGAPPLICATIONLoad Switch for Portable Devices4953DC/DC Conv

8.6. Size:31444K cn sps
sm4953.pdf

SM4953 Dual P-Channel Enhancement Mode MOSFETDescription The SM4953 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in buck converters.SOIC-8General Features Ordering Information Ordering Number Pin AssignmentPackage Packi

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