SM4953KC Todos los transistores

 ..1. Size:915K  cn vbsemi
 sm4953kc.pdf

SM4953KC www.VBsemi.tw Dual P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)d, e Qg (Typ.) TrenchFET Power MOSFET 0.029 at VGS = - 10 V - 7.3 100 % UIS Tested RoHS - 30 17 nC COMPLIANT 0.039 at VGS = - 4.5 V - 6.3 APPLICATIONS Load Switches S1 S2 SO-8 S1 1 D1 8 G1 G2 G1 2 D1 7 S2 3 D2 6 G2 4 D2 5 Top Vie

 7.1. Size:273K  sino
 sm4953k.pdf

SM4953K Dual P-Channel Enhancement Mode MOSFET Features Pin Description D1 D1 D2 -30V/-4.9A , D2 RDS(ON)=53m (typ.) @ VGS=-10V RDS(ON)=80m (typ.) @ VGS=-4.5V S1 G1 Reliable and Rugged S2 G2 Lead Free and Green Device Available Top View of SOP-8 (RoHS Compliant) D1 D1 D2 D2 (8) (7) (6) (5) Applications G1 G2 (2) (4) Power Management in Notebook Computer, Portable

 8.1. Size:225K  taiwansemi
 tsm4953dcs.pdf

TSM4953D 30V Dual P-Channel MOSFET SOP-8 Pin Definition PRODUCT SUMMARY 1. Source 1 8. Drain 1 2. Gate 1 7. Drain 1 VDS (V) RDS(on)(m ) ID (A) 3. Source 2 6. Drain 2 60 @ VGS = 10V -4.9 4. Gate 2 5. Drain 2 -30 90 @ VGS = 4.5V -3.7 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application

 8.2. Size:438K  globaltech semi
 gsm4953s.pdf

30V P-Channel Enhancement Mode MOSFET Product Description Features GSM4953S, P-Channel enhancement mode -30V/-5.4A,RDS(ON)=52m @VGS= -10V MOSFET, uses Advanced Trench Technology to -30V/-4.2A,RDS(ON)=76m @VGS= - 4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) volt

 8.3. Size:944K  globaltech semi
 gsm4953ws.pdf

GSM4953WS GSM4953WS 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM4953WS, P-Channel enhancement mode -30V/-5.4A,RDS(ON)=60m @VGS=-10V MOSFET, uses Advanced Trench Technology to -30V/-4.2A,RDS(ON)=80m @VGS=-4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particula

 8.4. Size:109K  silicon standard
 ssm4953m.pdf

SSM4953M P-CHANNEL ENHANCEMENT-MODE POWER MOSFETS Simple drive requirement BVDSS -30V D2 D2 Low on-resistance RDS(ON) 53m D1 D1 Fast switching I -5A D G2 S2 G1 SO-8 S1 D2 Description D1 MOSFETs from Silicon Standard Corp. provide the designer with the best combination of fast switching, G2 G1 ruggedized device design, low on-resistance and cost- effectiveness. S2 S1

 8.5. Size:416K  jsmsemi
 jsm4953.pdf

JSM4953 Dual P-Channel -30V(D-S) MOSFET V(BR)DSS RDS(on)MAX ID SOP-8 D2 D2 0.059 @-10V . D1 -30V -5.3A D1 0.089 @-4.5V G2 G S2 G1 S S S1 SO-8 S Pin 1 Equivalent Cir cuit D1 D2 General FEATURE TrenchFET Power MOSFET Lead free product is acquired Surface mount package G1 G2 S1 S2 MARKING APPLICATION Load Switch for Portable Devices 4953 DC/DC Conv

 8.6. Size:31444K  cn sps
 sm4953.pdf

SM4953 Dual P-Channel Enhancement Mode MOSFET Description The SM4953 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in buck converters. SOIC-8 General Features Ordering Information Ordering Number Pin Assignment Package Packi