SSM2307G Todos los transistores

SSM2307G www.VBsemi.tw P-Channel 20-V (D-S) MOSFET FEATURES MOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFET e - 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested 0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/EC APPLICATION

SSM2307GN P-CHANNEL ENHANCEMENT MODE POWER MOSFET PRODUCT SUMMARY D BVDSS -16V Simple Drive Requirement RDS(ON) 60m Small Package Outline Surface Mount Device ID - 4A S SOT-23 G DESCRIPTION The advanced power MOSFETs from Silicon Standard Corp. D provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effec

SSM2306N N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Capable of 2.5V gate-drive BVDSS 20V Lower on-resistance RDS(ON) 32m D Surface-mount package ID 5.3A S SOT-23 G Description Power MOSFETs from Silicon Standard utilize advanced processing techniques to achieve the lowest possible on-resistance in an extremely efficient and D cost-effective device. The SOT-23 package is widely use

SSM2309GN P-channel Enhancement-mode Power MOSFET Low gate-charge BVDSS -30V D Simple drive requirement R 75m DS(ON) Fast switching ID -3.7A G Pb-free; RoHS compliant. S DESCRIPTION D The SSM2309GN is in a SOT-23-3 package, which is widely used for lower power commercial and industrial surface mount applications. It is well suited S for low voltage applications such as DC/DC c

SSM2304AGN N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Simple drive requirement BV 30V DSS D Lower gate charge R 117m DS(ON) Fast switching characteristics ID 2.5A S SOT-23-3 G Description D Advanced Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. G S The SS

SSM2303N P-CHANNEL ENHANCEMENT-MODE POWER MOSFET Simple drive requirement BVDSS -30V Small package outline RDS(ON) 240m D Surface-mount device ID - 1.7A S SOT-23 G Description D Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. G S Absolute Maximum Ratings Symbol Parameter Rating Un

SSM2302N N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Capable of 2.5V gate drive BVDSS 20V Small package outline RDS(ON) 85m D Surface-mount package ID 2.8A S SOT-23 G Description Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, D low on-resistance and cost-effectiveness. G S Absolute Maximum Ratings Symbol Parameter Rating Uni

SSM2305GN P-channel Enhancement-mode Power MOSFET Low gate-charge BVDSS -20V D Simple drive requirement R 65m DS(ON) Fast switching ID -4.2A G Pb-free; RoHS compliant. S DESCRIPTION D The SSM2305GN is in a SOT-23-3 package, which is widely used for lower power commercial and industrial surface mount applications. This device is S suitable for low-voltage applications such as

SSM2301N P-CHANNEL ENHANCEMENT-MODE POWER MOSFET Simple drive requirement BV -20V DSS Small package outline RDS(ON) 130m D Surface-mount device ID -2.3A S SOT-23 G Description D Power MOSFETs from Silicon Standard Corp. provide the designer with the best combination of fast switching, low G on-resistance and cost-effectiveness. S The SOT-23 package is widely preferred for co

SSM2304N N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Simple drive requirement BV 25V DSS Small package outline R 117m D DS(ON) Surface-mount package I 2.5A D S SOT-23 G Description Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. D G S Absolute Maximum Ratings Symbol Parameter Rati

SSM2305AGN P-channel Enhancement-mode Power MOSFET Low gate-charge BVDSS -30V D Simple drive requirement R 80m DS(ON) Fast switching ID -3.2A G Pb-free; RoHS compliant. S DESCRIPTION D The SSM2305AGN is in a SOT-23-3 package, which is widely used for lower power commercial and industrial surface mount applications. This device is S suitable for low-voltage applications such a