ST2302MSRG Todos los transistores

 

ST2302MSRG MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: ST2302MSRG
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 1.25 W
   Voltaje máximo drenador - fuente |Vds|: 20 V
   Voltaje máximo fuente - puerta |Vgs|: 12 V
   Corriente continua de drenaje |Id|: 5 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 1 V
   Carga de la puerta (Qg): 12 nC
   Tiempo de subida (tr): 17 nS
   Conductancia de drenaje-sustrato (Cd): 105 pF
   Resistencia entre drenaje y fuente RDS(on): 0.028(typ) Ohm
   Paquete / Cubierta: SOT23

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ST2302MSRG Datasheet (PDF)

 ..1. Size:919K  cn vbsemi
st2302msrg.pdf

ST2302MSRG
ST2302MSRG

ST2302MSRGwww.VBsemi.twN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)e Qg (Typ.)Definition0.028 at VGS = 4.5 V TrenchFET Power MOSFET6a 100 % Rg Tested20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC0.050 at VGS = 1.8 V 5.6APPLICATIONS DC/D

 8.1. Size:188K  stansontech
st2302.pdf

ST2302MSRG
ST2302MSRG

ST2302 N Channel Enhancement Mode MOSFET 3.6A DESCRIPTION ST2302 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application such as cellular phone and noteboo

 8.2. Size:583K  jestek
jst2302h.pdf

ST2302MSRG
ST2302MSRG

JST2302H20V,3AN-Channel MosfetFEATURESSOT-23RDS(ON) 46m @VGS=4.5VRDS(ON) 70m @VGS=2.5VAPPLICATIONSLoad Switch for Portable DevicesDC/DC ConverterMARKING N-CHANNEL MOSFETMaximum ratings (Ta=25 unless otherwise noted)Parameter Symbol Value UnitDrain-Source Voltage VDS 20VGate-Source Voltage V 10GSI 3DContinuous Drain CurrentAPulsed Drain

 8.3. Size:1367K  winsok
wst2302.pdf

ST2302MSRG
ST2302MSRG

WST2302N-Ch MOSFETGeneral Description Product SummeryThe WST2302 is the highest performance trench BVDSS RDSON ID N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge 20V 70m 3.0Afor most of the small power switching and load switch applications.Applications The WST2302 meet the RoHS and Green Product requirement with full functio

 8.4. Size:878K  cn vbsemi
st2302.pdf

ST2302MSRG
ST2302MSRG

ST2302www.VBsemi.twN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)e Qg (Typ.)Definition0.028 at VGS = 4.5 V TrenchFET Power MOSFET6a 100 % Rg Tested20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC0.050 at VGS = 1.8 V 5.6APPLICATIONS DC/DC Co

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