ST2302MSRG MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: ST2302MSRG
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 1.25 W
Voltaje máximo drenador - fuente |Vds|: 20 V
Voltaje máximo fuente - puerta |Vgs|: 12 V
Corriente continua de drenaje |Id|: 5 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 1 V
Carga de la puerta (Qg): 12 nC
Tiempo de subida (tr): 17 nS
Conductancia de drenaje-sustrato (Cd): 105 pF
Resistencia entre drenaje y fuente RDS(on): 0.028(typ) Ohm
Paquete / Cubierta: SOT23
Búsqueda de reemplazo de MOSFET ST2302MSRG
ST2302MSRG Datasheet (PDF)
st2302msrg.pdf
ST2302MSRGwww.VBsemi.twN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)e Qg (Typ.)Definition0.028 at VGS = 4.5 V TrenchFET Power MOSFET6a 100 % Rg Tested20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC0.050 at VGS = 1.8 V 5.6APPLICATIONS DC/D
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jst2302h.pdf
JST2302H20V,3AN-Channel MosfetFEATURESSOT-23RDS(ON) 46m @VGS=4.5VRDS(ON) 70m @VGS=2.5VAPPLICATIONSLoad Switch for Portable DevicesDC/DC ConverterMARKING N-CHANNEL MOSFETMaximum ratings (Ta=25 unless otherwise noted)Parameter Symbol Value UnitDrain-Source Voltage VDS 20VGate-Source Voltage V 10GSI 3DContinuous Drain CurrentAPulsed Drain
wst2302.pdf
WST2302N-Ch MOSFETGeneral Description Product SummeryThe WST2302 is the highest performance trench BVDSS RDSON ID N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge 20V 70m 3.0Afor most of the small power switching and load switch applications.Applications The WST2302 meet the RoHS and Green Product requirement with full functio
st2302.pdf
ST2302www.VBsemi.twN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)e Qg (Typ.)Definition0.028 at VGS = 4.5 V TrenchFET Power MOSFET6a 100 % Rg Tested20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC0.050 at VGS = 1.8 V 5.6APPLICATIONS DC/DC Co
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: HGP049N10S
