STD30PF03 MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

STD30PF03 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: STD30PF03

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 40 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 40 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 13 nS

Cossⓘ - Capacitancia de salida: 180 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.018 typ Ohm

Encapsulados: TO252

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STD30PF03 datasheet

..1. Size:1451K cn vbsemi
std30pf03.pdf pdf_icon

STD30PF03 www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition 0.018 at VGS = - 10 V - 40 TrenchFET Power MOSFET - 30 13 nC 100 % Rg Tested 0.025 at VGS = - 4.5 V - 35 APPLICATIONS Load Switch Battery Switch S TO-252 G D G D S P-Channel MOSFET A

0.1. Size:333K st
std30pf03lt4 std30pf03l-1.pdf pdf_icon

STD30PF03LT4 STD30PF03L-1 P-channel 30 V - 0.025 - 24 A - DPAK / IPAK STripFET II Power MOSFET Features Type VDSS RDS(on) max ID STD30PF03LT4 30 V

0.2. Size:329K st
std30pf03l-1 std30pf03lt4.pdf pdf_icon

STD30PF03LT4 STD30PF03L-1 P-channel 30 V - 0.025 - 24 A - DPAK / IPAK STripFET II Power MOSFET Features Type VDSS RDS(on) max ID STD30PF03LT4 30 V

9.1. Size:47K st
std30ne06.pdf pdf_icon

STD30NE06 N - CHANNEL 60V - 0.025 - 30A - DPAK STripFET " POWER MOSFET PRELIMINARY DATA TYPE VDSS RDS(on) ID STD30NE06 60 V

9.2. Size:465K st
std30nf06l.pdf pdf_icon

STD30NF06L N-CHANNEL 60V - 0.022 - 35A DPAK/IPAK STripFET POWER MOSFET TYPE VDSS RDS(on) ID STD30NF06L 60 V

9.3. Size:276K st
std30ne06l.pdf pdf_icon

STD30NE06L N - CHANNEL 60V - 0.025 - 30A TO-252 STripFET POWER MOSFET TYPE VDSS RDS(on) ID STD30NE06L 60 V

9.4. Size:324K st
std30nf06t4.pdf pdf_icon

STD30NF06 N-CHANNEL 60V - 0.020 - 28A IPAK/DPAK STripFET II POWER MOSFET TYPE VDSS RDS(on) ID STD30NF06 60 V

9.5. Size:461K st
std30nf06.pdf pdf_icon

STD30NF06 N-CHANNEL 60V - 0.020 - 28A IPAK/DPAK STripFET II POWER MOSFET TYPE VDSS RDS(on) ID STD30NF06 60 V

9.6. Size:55K st
std30ne06l-.pdf pdf_icon

STD30NE06L N - CHANNEL 60V - 0.025 - 30A - DPAK STripFET " POWER MOSFET PRELIMINARY DATA TYPE VDSS RDS(on) ID STD30NE06L 60 V

9.7. Size:192K st
std30ne06lt4.pdf pdf_icon

STD30NE06L N - CHANNEL 60V - 0.025 - 30A TO-252 STripFET POWER MOSFET TYPE VDSS RDS(on) ID STD30NE06L 60 V

9.8. Size:342K st
std30nf06l-1 std30nf06lt4.pdf pdf_icon

STD30NF06L N-CHANNEL 60V - 0.022 - 35A DPAK/IPAK STripFET POWER MOSFET TYPE VDSS RDS(on) ID STD30NF06L 60 V

9.9. Size:1191K st
std30n10f7 stf30n10f7.pdf pdf_icon

STD30N10F7, STF30N10F7 N-channel 100 V, 0.02 typ., 32 A STripFET VII DeepGATE Power MOSFETs in DPAK and TO-220FP packages Datasheet - production data Features Order codes VDS RDS(on) max ID PTOT STD30N10F7 32 A 50 W 100 V 0.024 TAB STF30N10F7 24 A 25 W 3 1 Ultra low on-resistance 3 DPAK 2 100% avalanche tested 1 TO-220FP Applications Switching appl

9.10. Size:763K st
std30n10f7.pdf pdf_icon

STD30N10F7 N-channel 100 V, 0.02 typ., 32 A, STripFET F7 Power MOSFET in a DPAK package Datasheet - production data Features Order code V R max. I P DS DS(on) D TOT STD30N10F7 100 V 0.024 32 A 50 W Among the lowest R on the market DS(on) Excellent FoM (figure of merit) Low C /C ratio for EMI immunity rss iss High avalanche ruggedness Figure 1 I

9.11. Size:906K st
std30nf04lt.pdf pdf_icon

STD30NF04LT N-channel 40 V, 0.03 typ., 30 A, STripFET II Power MOSFET in a DPAK package Datasheet - production data Features Order code VDSS RDS(on) max ID STD30NF04LT 40 V

9.12. Size:327K st
std30nf03l-1 std30nf03lt4.pdf pdf_icon

STD30NF03L STD30NF03L-1 N-channel 30V - 0.020 - 30A - DPAK/IPAK STripFET II Power MOSFET General features Type VDSS RDS(on) ID STD30NF03L-1 30V

9.13. Size:328K st
std30nf03l std30nf03l-1.pdf pdf_icon

STD30NF03L STD30NF03L-1 N-channel 30V - 0.020 - 30A - DPAK/IPAK STripFET II Power MOSFET General features Type VDSS RDS(on) ID STD30NF03L-1 30V

9.14. Size:146K samhop
stu30n15 std30n15.pdf pdf_icon

Green Product STU/D30N15 a S mHop Microelectronics C orp. Ver 1.1 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). RDS(ON) (m ) Typ VDSS ID Rugged and reliable. 22A 150V 62 @ VGS=10V TO-252 and TO-251 Package. G S STU SERIES STD SERIES TO-252AA (D-PAK) TO-251 (I-PAK) ABSOLUTE MAXIMUM RATING

9.15. Size:141K samhop
stu30n01 std30n01.pdf pdf_icon

STU30N01 Green Product STD30N01 a S mHop Microelectronics C orp. Ver 1.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). RDS(ON) (m ) Typ VDSS ID Rugged and reliable. 30A 30 @ VGS=10V 100V TO-252 and TO-251 Package. G S STU SERIES STD SERIES ( ) TO - 252AA D- PAK ( ) TO - 251 I - PAK A

9.16. Size:184K samhop
stu303s std303s.pdf pdf_icon

S TU/D303S S amHop Microelectronics C orp. Nov, 2007 16, P-C hannel E nhancement Mode Field E ffect Transistor FEATURES PRODUCT SUMMARY S uper high dense cell design for low R DS (ON). RDS(ON) (mW) Max V DS S ID R ugged and reliable. 28 @ V GS =-10V S urface Mount Package. -30V -24A 40 @ V GS = -4.5V ESD Procteced D D G S G STU SERIES STD SERIES TO-252AA(D-P AK) TO-251(l-P

9.17. Size:104K samhop
stu302s std302s.pdf pdf_icon

S TU/D302S S amHop Microelectronics C orp. Apr 03,2006 N-Channel Logic Level E nhancement Mode Field E ffect Transistor PR ODUC T S UMMAR Y FEATURES S uper high dense cell design for low R DS (ON). VDS S ID R DS (ON) ( m ) Max R ugged and reliable. 9 @ VGS =10V 30V 50 A TO-252 and TO-251 Package. 12 @ VGS =4.5V D D G S G STU SERIES STD SERIES TO-252AA(D-PAK) TO-251(l-PAK)

9.18. Size:118K samhop
stu30l01a std30l01a.pdf pdf_icon

Green Product STU/D30L01A a S mHop Microelectronics C orp. Ver 1.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). RDS(ON) (m ) Typ VDSS ID Rugged and reliable. 100V 30A 30 @ VGS=10V TO-252 and TO-251 Package. G G S S STU SERIES STD SERIES ( ) TO - 252AA D- PAK ( ) TO - 251 I - PAK (TA

9.19. Size:115K samhop
stu307s std307s.pdf pdf_icon

Green Product STU/D307S a S mHop Microelectronics C orp. Ver 1.0 P-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). RDS(ON) (m ) Max VDSS ID Rugged and reliable. 9.5 @ VGS=-10V Suface Mount Package. -30V -53A 14 @ VGS=-4.5V ESD Protected. G G S S STU SERIES STD SERIES ( ) TO - 252AA D- P

9.20. Size:125K samhop
stu3030nls std3030nls.pdf pdf_icon

Green Product S TU/D3030NLS S amHop Microelectronics C orp. Aug 08,2005 N-Channel Logic Level E nhancement Mode Field E ffect Transistor PR ODUC T S UMMAR Y FEATUR ES S uper high dense cell design for low R DS (ON). VDS S ID R DS (ON) ( m ) Max R ugged and reliable. 18 @ VGS = 10V 30V 30A TO-252 and TO-251 Package. 25 @ VGS =4.5V D D D G G S S G STU SERIES STD SERIES T

9.21. Size:120K samhop
stu3055l std3055l.pdf pdf_icon

Green Product S TU/D3055L S amHop Microelectronics C orp. Nov,01 2006 ver1.3 N-Channel Logic Level E nhancement Mode Field E ffect Transistor PR ODUC T S UMMAR Y FEATUR ES S uper high dense cell design for low R DS (ON). VDS S ID R DS (ON) ( m ) Max R ugged and reliable. 60 @ VGS = 10V 25V 12A TO-252 and TO-251 Package. 85 @ VGS =4.5V D D D G G S S G STU SERIES STD SERI

9.22. Size:118K samhop
stu30l01 std30l01.pdf pdf_icon

Green Product STU/D30L01 a S mHop Microelectronics C orp. Ver 2.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). RDS(ON) (m ) Typ VDSS ID Rugged and reliable. 100V 30A 30 @ VGS=10V TO-252 and TO-251 Package. G G S S STU SERIES STD SERIES ( ) TO - 252AA D- PAK ( ) TO - 251 I - PAK (TA=

9.23. Size:760K cn vbsemi
std30nf04lt.pdf pdf_icon

STD30NF04LT www.VBsemi.tw N-Channel 4 0-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU 0.013 at VGS = 10 V 55 40 42 nC 0.018 at VGS = 4.5 V 45 APPLICATIONS D OR-ing TO-252 Server DC/DC G D G S S Top View N-Channel MOSFET

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