STD30PF03 Todos los transistores

 

STD30PF03 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: STD30PF03
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 40 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 40 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 13 nS
   Cossⓘ - Capacitancia de salida: 180 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.018(typ) Ohm
   Paquete / Cubierta: TO252

 Búsqueda de reemplazo de MOSFET STD30PF03

 

STD30PF03 Datasheet (PDF)

 ..1. Size:1451K  cn vbsemi
std30pf03.pdf

STD30PF03
STD30PF03

STD30PF03www.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.018 at VGS = - 10 V - 40 TrenchFET Power MOSFET- 30 13 nC 100 % Rg Tested0.025 at VGS = - 4.5 V - 35APPLICATIONS Load Switch Battery SwitchSTO-252 GDG D S P-Channel MOSFETA

 0.1. Size:333K  st
std30pf03lt4 std30pf03l-1.pdf

STD30PF03
STD30PF03

STD30PF03LT4STD30PF03L-1P-channel 30 V - 0.025 - 24 A - DPAK / IPAKSTripFET II Power MOSFETFeatures Type VDSS RDS(on) max IDSTD30PF03LT4 30 V

 0.2. Size:329K  st
std30pf03l-1 std30pf03lt4.pdf

STD30PF03
STD30PF03

STD30PF03LT4STD30PF03L-1P-channel 30 V - 0.025 - 24 A - DPAK / IPAKSTripFET II Power MOSFETFeatures Type VDSS RDS(on) max IDSTD30PF03LT4 30 V

 9.1. Size:47K  st
std30ne06.pdf

STD30PF03
STD30PF03

STD30NE06N - CHANNEL 60V - 0.025 - 30A - DPAKSTripFET " POWER MOSFETPRELIMINARY DATATYPE VDSS RDS(on) IDSTD30NE06 60 V

 9.2. Size:465K  st
std30nf06l.pdf

STD30PF03
STD30PF03

STD30NF06LN-CHANNEL 60V - 0.022 - 35A DPAK/IPAKSTripFET POWER MOSFETTYPE VDSS RDS(on) IDSTD30NF06L 60 V

 9.3. Size:276K  st
std30ne06l.pdf

STD30PF03
STD30PF03

STD30NE06LN - CHANNEL 60V - 0.025 - 30A TO-252STripFET POWER MOSFETTYPE VDSS RDS(on) IDSTD30NE06L 60 V

 9.4. Size:324K  st
std30nf06t4.pdf

STD30PF03
STD30PF03

STD30NF06N-CHANNEL 60V - 0.020 - 28A IPAK/DPAKSTripFET II POWER MOSFETTYPE VDSS RDS(on) IDSTD30NF06 60 V

 9.5. Size:461K  st
std30nf06.pdf

STD30PF03
STD30PF03

STD30NF06N-CHANNEL 60V - 0.020 - 28A IPAK/DPAKSTripFET II POWER MOSFETTYPE VDSS RDS(on) IDSTD30NF06 60 V

 9.6. Size:55K  st
std30ne06l-.pdf

STD30PF03
STD30PF03

STD30NE06LN - CHANNEL 60V - 0.025 - 30A - DPAKSTripFET " POWER MOSFETPRELIMINARY DATATYPE VDSS RDS(on) IDSTD30NE06L 60 V

 9.7. Size:192K  st
std30ne06lt4.pdf

STD30PF03
STD30PF03

STD30NE06LN - CHANNEL 60V - 0.025 - 30A TO-252STripFET POWER MOSFETTYPE VDSS RDS(on) IDSTD30NE06L 60 V

 9.8. Size:342K  st
std30nf06l-1 std30nf06lt4.pdf

STD30PF03
STD30PF03

STD30NF06LN-CHANNEL 60V - 0.022 - 35A DPAK/IPAKSTripFET POWER MOSFETTYPE VDSS RDS(on) IDSTD30NF06L 60 V

 9.9. Size:1191K  st
std30n10f7 stf30n10f7.pdf

STD30PF03
STD30PF03

STD30N10F7, STF30N10F7N-channel 100 V, 0.02 typ., 32 A STripFET VII DeepGATE Power MOSFETs in DPAK and TO-220FP packagesDatasheet - production dataFeaturesOrder codes VDS RDS(on) max ID PTOTSTD30N10F7 32 A 50 W100 V 0.024 TABSTF30N10F7 24 A 25 W31 Ultra low on-resistance3DPAK2 100% avalanche tested1TO-220FPApplications Switching appl

 9.10. Size:763K  st
std30n10f7.pdf

STD30PF03
STD30PF03

STD30N10F7 N-channel 100 V, 0.02 typ., 32 A, STripFET F7 Power MOSFET in a DPAK package Datasheet - production data Features Order code V R max. I P DS DS(on) D TOTSTD30N10F7 100 V 0.024 32 A 50 W Among the lowest R on the market DS(on) Excellent FoM (figure of merit) Low C /C ratio for EMI immunity rss iss High avalanche ruggedness Figure 1: I

 9.11. Size:906K  st
std30nf04lt.pdf

STD30PF03
STD30PF03

STD30NF04LTN-channel 40 V, 0.03 typ., 30 A, STripFET II Power MOSFET ina DPAK packageDatasheet - production dataFeaturesOrder code VDSS RDS(on) max IDSTD30NF04LT 40 V

 9.12. Size:327K  st
std30nf03l-1 std30nf03lt4.pdf

STD30PF03
STD30PF03

STD30NF03LSTD30NF03L-1N-channel 30V - 0.020 - 30A - DPAK/IPAKSTripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTD30NF03L-1 30V

 9.13. Size:328K  st
std30nf03l std30nf03l-1.pdf

STD30PF03
STD30PF03

STD30NF03LSTD30NF03L-1N-channel 30V - 0.020 - 30A - DPAK/IPAKSTripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTD30NF03L-1 30V

 9.14. Size:146K  samhop
stu30n15 std30n15.pdf

STD30PF03
STD30PF03

GreenProductSTU/D30N15aS mHop Microelectronics C orp.Ver 1.1N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).RDS(ON) (m) TypVDSS IDRugged and reliable.22A150V 62 @ VGS=10VTO-252 and TO-251 Package.GSSTU SERIES STD SERIESTO-252AA (D-PAK) TO-251 (I-PAK)ABSOLUTE MAXIMUM RATING

 9.15. Size:141K  samhop
stu30n01 std30n01.pdf

STD30PF03
STD30PF03

STU30N01GreenProductSTD30N01aS mHop Microelectronics C orp.Ver 1.0N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).RDS(ON) (m) TypVDSS IDRugged and reliable.30A 30 @ VGS=10V100VTO-252 and TO-251 Package.GSSTU SERIESSTD SERIES( )TO - 252AA D- PAK ( )TO - 251 I - PAKA

 9.16. Size:184K  samhop
stu303s std303s.pdf

STD30PF03
STD30PF03

S TU/D303SS amHop Microelectronics C orp.Nov, 200716,P-C hannel E nhancement Mode Field E ffect TransistorFEATURESPRODUCT SUMMARYS uper high dense cell design for low R DS (ON).RDS(ON) (mW) MaxV DS S IDR ugged and reliable.28 @ V GS =-10VS urface Mount Package.-30V -24A40 @ V GS = -4.5VESD ProctecedDDGS GSTU SERIES STD SERIESTO-252AA(D-P AK) TO-251(l-P

 9.17. Size:104K  samhop
stu302s std302s.pdf

STD30PF03
STD30PF03

S TU/D302SS amHop Microelectronics C orp.Apr 03,2006N-Channel Logic Level E nhancement Mode Field E ffect TransistorPR ODUC T S UMMAR Y FEATURESS uper high dense cell design for low R DS (ON).VDS S ID R DS (ON) ( m ) MaxR ugged and reliable.9 @ VGS =10V30V 50 ATO-252 and TO-251 Package.12 @ VGS =4.5VDDGSGSTU SERIES STD SERIESTO-252AA(D-PAK) TO-251(l-PAK)

 9.18. Size:118K  samhop
stu30l01a std30l01a.pdf

STD30PF03
STD30PF03

GreenProductSTU/D30L01AaS mHop Microelectronics C orp.Ver 1.0N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).RDS(ON) (m) TypVDSS IDRugged and reliable.100V 30A 30 @ VGS=10VTO-252 and TO-251 Package.GGSSSTU SERIESSTD SERIES( )TO - 252AA D- PAK ( )TO - 251 I - PAK(TA

 9.19. Size:115K  samhop
stu307s std307s.pdf

STD30PF03
STD30PF03

GreenProductSTU/D307SaS mHop Microelectronics C orp.Ver 1.0P-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).RDS(ON) (m) MaxVDSS IDRugged and reliable.9.5 @ VGS=-10VSuface Mount Package.-30V -53A14 @ VGS=-4.5VESD Protected.GGSSSTU SERIESSTD SERIES( )TO - 252AA D- P

 9.20. Size:125K  samhop
stu3030nls std3030nls.pdf

STD30PF03
STD30PF03

GreenProductS TU/D3030NLSS amHop Microelectronics C orp.Aug 08,2005N-Channel Logic Level E nhancement Mode Field E ffect TransistorPR ODUC T S UMMAR Y FEATUR ESS uper high dense cell design for low R DS (ON).VDS S ID R DS (ON) ( m ) MaxR ugged and reliable.18 @ VGS = 10V30V 30ATO-252 and TO-251 Package.25 @ VGS =4.5VDDDGGSSGSTU SERIES STD SERIEST

 9.21. Size:120K  samhop
stu3055l std3055l.pdf

STD30PF03
STD30PF03

GreenProductS TU/D3055LS amHop Microelectronics C orp.Nov,01 2006 ver1.3N-Channel Logic Level E nhancement Mode Field E ffect TransistorPR ODUC T S UMMAR Y FEATUR ESS uper high dense cell design for low R DS (ON).VDS S ID R DS (ON) ( m ) MaxR ugged and reliable.60 @ VGS = 10V25V 12ATO-252 and TO-251 Package.85 @ VGS =4.5VDDDGGSSGSTU SERIES STD SERI

 9.22. Size:118K  samhop
stu30l01 std30l01.pdf

STD30PF03
STD30PF03

GreenProductSTU/D30L01aS mHop Microelectronics C orp.Ver 2.0N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).RDS(ON) (m) TypVDSS IDRugged and reliable.100V 30A 30 @ VGS=10VTO-252 and TO-251 Package.GGSSSTU SERIESSTD SERIES( )TO - 252AA D- PAK ( )TO - 251 I - PAK(TA=

 9.23. Size:760K  cn vbsemi
std30nf04lt.pdf

STD30PF03
STD30PF03

STD30NF04LTwww.VBsemi.twN-Channel 4 0-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.013 at VGS = 10 V 5540 42 nC0.018 at VGS = 4.5 V 45APPLICATIONSD OR-ingTO-252 Server DC/DCGDG SSTop ViewN-Channel MOSFET

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History: APM2605C | AP9974GS | 2SK2684

 

 
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History: APM2605C | AP9974GS | 2SK2684

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