TN0200TS Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: TN0200TS 📄📄
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.25 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V
|Id|ⓘ - Corriente continua de drenaje: 5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 17 nS
Cossⓘ - Capacitancia de salida: 105 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.028 typ Ohm
Encapsulados: SOT23
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TN0200TS datasheet
tn0200ts.pdf
TN0200TS www.VBsemi.tw N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)e Qg (Typ.) Definition 0.028 at VGS = 4.5 V TrenchFET Power MOSFET 6a 100 % Rg Tested 20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC 0.050 at VGS = 1.8 V 5.6 APPLICATIONS DC/DC
tn0200k.pdf
New Product TN0200K Vishay Siliconix N-Channel 20-V (D-S) MOSFETs FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) rDS(on) ( )ID (A) ESD Protected 4000 V 0.4 at VGS = 4.5 V 0.73 RoHS 20 COMPLIANT APPLICATIONS 0.5 at VGS = 2.5 V 0.65 Direct Logic-Level Interface TTL/CMOS Drivers Relays, Solenoids, Lamps, Hammers Battery Operated Systems,
tn0200k-t1.pdf
TN0200K-T1 www.VBsemi.tw N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)e Qg (Typ.) Definition 0.028 at VGS = 4.5 V TrenchFET Power MOSFET 6a 100 % Rg Tested 20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC 0.050 at VGS = 1.8 V 5.6 APPLICATIONS DC/D
tn0201k-kl tn0201k.pdf
TN0201K/TN0201KL Vishay Siliconix New Product N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFET ID (A) V(BR)DSS rDS( ) V(BR)DSS rDS(on) APPLICATIONS TN0201K TN0201KL Min (V) Max (W) VGS(th) (V) D Direct Logic-Level Interface TTL/CMOS 1.0 @ VGS = 10 V 0.42 0.64 D Drivers Relays, Solenoids, Lamps, Hammers, 20 1 0 to 3 0 20 1.0 to 3.0 Displays, Memor
Otros transistores... STT8205S, SUD08P06-155, SUD08P06-155L-E3, SUD10P06-280L, SUD40N08, SUP75N08-10, SUU50N06-07L, TN0200K-T1, IRFZ44N, TP0101TS-T1, TPCA8036, UT100N03L, UT2301G-AE3-R, UT2302G-AE3, UT2302L-AE3, UT2955G, UT6898G-S08-R
Parámetros del MOSFET. Cómo se afectan entre sí.
History: IXFK48N55 | SST65R600S2 | IRF8714PBF | NDH8504P
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