TN0200TS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: TN0200TS
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.25 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 17 nS
   Cossⓘ - Capacitancia de salida: 105 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.028(typ) Ohm
   Paquete / Cubierta: SOT23

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TN0200TS Datasheet (PDF)

..1. Size:1478K cn vbsemi
tn0200ts.pdf

TN0200TSwww.VBsemi.twN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)e Qg (Typ.)Definition0.028 at VGS = 4.5 V TrenchFET Power MOSFET6a 100 % Rg Tested20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC0.050 at VGS = 1.8 V 5.6APPLICATIONS DC/DC

8.1. Size:75K vishay
tn0200k.pdf

New ProductTN0200KVishay SiliconixN-Channel 20-V (D-S) MOSFETsFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) rDS(on) ()ID (A) ESD Protected: 4000 V0.4 at VGS = 4.5 V0.73RoHS20COMPLIANTAPPLICATIONS0.5 at VGS = 2.5 V0.65 Direct Logic-Level Interface: TTL/CMOS Drivers: Relays, Solenoids, Lamps, Hammers Battery Operated Systems,

8.2. Size:1511K cn vbsemi
tn0200k-t1.pdf

TN0200K-T1www.VBsemi.twN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)e Qg (Typ.)Definition0.028 at VGS = 4.5 V TrenchFET Power MOSFET6a 100 % Rg Tested20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC0.050 at VGS = 1.8 V 5.6APPLICATIONS DC/D

9.1. Size:84K vishay
tn0201k-kl tn0201k.pdf

TN0201K/TN0201KLVishay SiliconixNew ProductN-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARYD TrenchFETr Power MOSFETID (A)V(BR)DSS rDS( )V(BR)DSS rDS(on) APPLICATIONSTN0201K TN0201KLMin (V) Max (W) VGS(th) (V)D Direct Logic-Level Interface: TTL/CMOS1.0 @ VGS = 10 V 0.42 0.64D Drivers: Relays, Solenoids, Lamps, Hammers,20 1 0 to 3 020 1.0 to 3.0Displays, Memor

9.2. Size:38K vishay
tn0201t.pdf

TN0201TVishay SiliconixN-Channel 20V (DS) MOSFETPRODUCT SUMMARYV(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A)1.0 @ VGS = 10 V20 1.0 to 3.0 0.391.4 @ VGS = 4.5 VFEATURES BENEFITS APPLICATIONSD Low On-Resistance: 0.75 W D Low Offset Voltage D Direct Logic-Level Interface: TTL/CMOSD Low Threshold:

9.3. Size:102K vishay
tn0201k tn0201kl.pdf

9.4. Size:40K vishay
tn0205a tn0205ad.pdf

TN0205A/ADNew ProductVishay SiliconixN-Channel 20-V MOSFETPRODUCT SUMMARYVDS (V) rDS(on) (W) ID (mA)2.0 @ VGS = 4.5 V 250202.5 @ VGS = 2.5 V 150FEATURES BENEFITS APPLICATIONSD Low On-Resistance: 2.0 D Ease in Driving Switches D Drivers: Relays, Solenoids, Lamps,Hammers, Display, MemoriesD Low Threshold: 0.9 V (typ) D Low Offset (Error) VoltageD Battery operated Sys

9.5. Size:773K cn hunteck
htn020n04p.pdf

HTN020N04P P-140V N-Ch Power MOSFET40 VVDSFeature1.4RDS(on),typ VGS=10V m Optimized for high speed switching, Logic Level1.8RDS(on),typ VGS=4.5V m Enhanced Body diode dv/dt capability181 AID (Sillicon Limited) Enhanced Avalanche Ruggedness60 AID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Sync

9.6. Size:917K cn hunteck
htn020n03.pdf

HTN020N03 P-130V N-Ch Power MOSFETFeature30 VVDS High Speed Power Switching, Logic Level1.6RDS(on),typ VGS=10V m Enhanced Avalanche Ruggedness100 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Hard Switching and High Speed Circuit Drain DC/DC in Telecoms and InductrialDFN5x6GateSrcPart Number P

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