TN0200TS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: TN0200TS
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 1.25 W
Voltaje máximo drenador - fuente |Vds|: 20 V
Voltaje máximo fuente - puerta |Vgs|: 12 V
Corriente continua de drenaje |Id|: 5 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 1 V
Carga de la puerta (Qg): 12 nC
Tiempo de subida (tr): 17 nS
Conductancia de drenaje-sustrato (Cd): 105 pF
Resistencia entre drenaje y fuente RDS(on): 0.028(typ) Ohm
Paquete / Cubierta: SOT23
Búsqueda de reemplazo de MOSFET TN0200TS
TN0200TS Datasheet (PDF)
tn0200ts.pdf
TN0200TSwww.VBsemi.twN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)e Qg (Typ.)Definition0.028 at VGS = 4.5 V TrenchFET Power MOSFET6a 100 % Rg Tested20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC0.050 at VGS = 1.8 V 5.6APPLICATIONS DC/DC
tn0200k.pdf
New ProductTN0200KVishay SiliconixN-Channel 20-V (D-S) MOSFETsFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) rDS(on) ()ID (A) ESD Protected: 4000 V0.4 at VGS = 4.5 V0.73RoHS20COMPLIANTAPPLICATIONS0.5 at VGS = 2.5 V0.65 Direct Logic-Level Interface: TTL/CMOS Drivers: Relays, Solenoids, Lamps, Hammers Battery Operated Systems,
tn0200k-t1.pdf
TN0200K-T1www.VBsemi.twN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)e Qg (Typ.)Definition0.028 at VGS = 4.5 V TrenchFET Power MOSFET6a 100 % Rg Tested20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC0.050 at VGS = 1.8 V 5.6APPLICATIONS DC/D
tn0201k-kl tn0201k.pdf
TN0201K/TN0201KLVishay SiliconixNew ProductN-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARYD TrenchFETr Power MOSFETID (A)V(BR)DSS rDS( )V(BR)DSS rDS(on) APPLICATIONSTN0201K TN0201KLMin (V) Max (W) VGS(th) (V)D Direct Logic-Level Interface: TTL/CMOS1.0 @ VGS = 10 V 0.42 0.64D Drivers: Relays, Solenoids, Lamps, Hammers,20 1 0 to 3 020 1.0 to 3.0Displays, Memor
tn0201t.pdf
TN0201TVishay SiliconixN-Channel 20V (DS) MOSFETPRODUCT SUMMARYV(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A)1.0 @ VGS = 10 V20 1.0 to 3.0 0.391.4 @ VGS = 4.5 VFEATURES BENEFITS APPLICATIONSD Low On-Resistance: 0.75 W D Low Offset Voltage D Direct Logic-Level Interface: TTL/CMOSD Low Threshold:
tn0201k tn0201kl.pdf
TN0201K/TN0201KLVishay SiliconixNew ProductN-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARYD TrenchFETr Power MOSFETID (A)V(BR)DSS rDS( )V(BR)DSS rDS(on) APPLICATIONSTN0201K TN0201KLMin (V) Max (W) VGS(th) (V)D Direct Logic-Level Interface: TTL/CMOS1.0 @ VGS = 10 V 0.42 0.64D Drivers: Relays, Solenoids, Lamps, Hammers,20 1 0 to 3 020 1.0 to 3.0Displays, Memor
tn0205a tn0205ad.pdf
TN0205A/ADNew ProductVishay SiliconixN-Channel 20-V MOSFETPRODUCT SUMMARYVDS (V) rDS(on) (W) ID (mA)2.0 @ VGS = 4.5 V 250202.5 @ VGS = 2.5 V 150FEATURES BENEFITS APPLICATIONSD Low On-Resistance: 2.0 D Ease in Driving Switches D Drivers: Relays, Solenoids, Lamps,Hammers, Display, MemoriesD Low Threshold: 0.9 V (typ) D Low Offset (Error) VoltageD Battery operated Sys
htn020n04p.pdf
HTN020N04P P-140V N-Ch Power MOSFET40 VVDSFeature1.4RDS(on),typ VGS=10V m Optimized for high speed switching, Logic Level1.8RDS(on),typ VGS=4.5V m Enhanced Body diode dv/dt capability181 AID (Sillicon Limited) Enhanced Avalanche Ruggedness60 AID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Sync
htn020n03.pdf
HTN020N03 P-130V N-Ch Power MOSFETFeature30 VVDS High Speed Power Switching, Logic Level1.6RDS(on),typ VGS=10V m Enhanced Avalanche Ruggedness100 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Hard Switching and High Speed Circuit Drain DC/DC in Telecoms and InductrialDFN5x6GateSrcPart Number P
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