TPCA8036 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: TPCA8036
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 3.35 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 21 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 11 nS
Cossⓘ - Capacitancia de salida: 1025 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.003(typ) Ohm
Paquete / Cubierta: DFN5X6
Búsqueda de reemplazo de TPCA8036 MOSFET
TPCA8036 Datasheet (PDF)
tpca8036.pdf

TPCA8036www.VBsemi.twN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ.) 100 % Rg and UIS Tested0.003 at VGS = 10 V 80APPLICATIONS30 71 nC0.005 at VGS = 4.5 V 70 Notebook PC Core VRM/POLDDFN5X6Top ViewTop View Bottom View182736 G45PIN1SN-Channel MOSFETABSO
tpca8036-h.pdf

TPCA8036-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS-H) TPCA8036-H High-Efficiency DC-DC Converter Applications Unit: mmNotebook PC Applications 1.27 0.4 0.1 8 0.05 M A Portable Equipment Applications 5 0.15 0.05 Small footprint due to a small and thin package High-speed switching 40.595 Small gate charge: QSW = 13 nC (
tpca8030-h.pdf

TPCA8030-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS V-H) TPCA8030-H High-Efficiency DC-DC Converter Applications Unit: mmNotebook PC Applications 1.27 0.4 0.1 8 0.05 M A Portable Equipment Applications 5 0.15 0.05 Small footprint due to a small and thin package High-speed switching 40.595 1 Small gate charge: QSW = 5.0 n
tpca8039-h.pdf

TPCA8039-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS-H) TPCA8039-H High-Efficiency DC-DC Converter Applications Unit: mmNotebook PC Applications 1.27 0.4 0.1 8 0.05 M A Portable Equipment Applications 5 0.15 0.05 Small footprint due to a small and thin package High-speed switching 40.595 Small gate charge: QSW = 8.6 nC
Otros transistores... SUD08P06-155L-E3 , SUD10P06-280L , SUD40N08 , SUP75N08-10 , SUU50N06-07L , TN0200K-T1 , TN0200TS , TP0101TS-T1 , IRF840 , UT100N03L , UT2301G-AE3-R , UT2302G-AE3 , UT2302L-AE3 , UT2955G , UT6898G-S08-R , UT8205AG-AG6 , UTT25P10L .
History: STT3810N | NTBLS001N06C | SQM110N04-04 | IPF13N03LAG | HY3410B | MTP20N20E | IRFPG22
History: STT3810N | NTBLS001N06C | SQM110N04-04 | IPF13N03LAG | HY3410B | MTP20N20E | IRFPG22



Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: JBE084M | JBE083NS | JBE083M | JMH70R430AK | JMH70R430AF | JMH65R980APLN | JMH65R980AKQ | JMH65R980AK | JMH65R980AF | JMH65R980ACFP | JMH65R640AK | JMH65R600MK | JMH65R600MF | JMPL1025AK | JMPL1025AE | JMPL0648PKQ
Popular searches
hy1906 | 2sc2238 | 2sc458 transistor | b649a transistor | 2sa606 | 2n3644 | 2sc2240bl | 2sc1913