TPCA8036 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: TPCA8036
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 3.35 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 21 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 11 nS
Cossⓘ - Capacitancia de salida: 1025 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.003 typ Ohm
Encapsulados: DFN5X6
Búsqueda de reemplazo de TPCA8036 MOSFET
- Selecciónⓘ de transistores por parámetros
TPCA8036 datasheet
tpca8036.pdf
TPCA8036 www.VBsemi.tw N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ.) 100 % Rg and UIS Tested 0.003 at VGS = 10 V 80 APPLICATIONS 30 71 nC 0.005 at VGS = 4.5 V 70 Notebook PC Core VRM/POL D DFN5X6 Top View Top View Bottom View 1 8 2 7 3 6 G 4 5 PIN1 S N-Channel MOSFET ABSO
tpca8036-h.pdf
TPCA8036-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS -H) TPCA8036-H High-Efficiency DC-DC Converter Applications Unit mm Notebook PC Applications 1.27 0.4 0.1 8 0.05 M A Portable Equipment Applications 5 0.15 0.05 Small footprint due to a small and thin package High-speed switching 4 0.595 Small gate charge QSW = 13 nC (
tpca8030-h.pdf
TPCA8030-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS V-H) TPCA8030-H High-Efficiency DC-DC Converter Applications Unit mm Notebook PC Applications 1.27 0.4 0.1 8 0.05 M A Portable Equipment Applications 5 0.15 0.05 Small footprint due to a small and thin package High-speed switching 4 0.595 1 Small gate charge QSW = 5.0 n
tpca8039-h.pdf
TPCA8039-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS -H) TPCA8039-H High-Efficiency DC-DC Converter Applications Unit mm Notebook PC Applications 1.27 0.4 0.1 8 0.05 M A Portable Equipment Applications 5 0.15 0.05 Small footprint due to a small and thin package High-speed switching 4 0.595 Small gate charge QSW = 8.6 nC
Otros transistores... SUD08P06-155L-E3 , SUD10P06-280L , SUD40N08 , SUP75N08-10 , SUU50N06-07L , TN0200K-T1 , TN0200TS , TP0101TS-T1 , IRF840 , UT100N03L , UT2301G-AE3-R , UT2302G-AE3 , UT2302L-AE3 , UT2955G , UT6898G-S08-R , UT8205AG-AG6 , UTT25P10L .
History: UT100N03L
History: UT100N03L
🌐 : EN ES РУ
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AUB034N10 | AUB033N08BG | AUB026N085 | AUA062N08BG | AUA060N08AG | AUA056N08BGL | AUA039N10 | ASW80R290E | ASW65R120EFD | ASW65R110E | ASW65R095EFD | ASW65R046EFD | ASW65R041EFDA | ASW65R041E | ASW60R150E | ASW60R090EFDA
Popular searches
hy1906 | 2sc2238 | 2sc458 transistor | b649a transistor | 2sa606 | 2n3644 | 2sc2240bl | 2sc1913
