UT2302L-AE3 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: UT2302L-AE3
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.25 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V
|Id|ⓘ - Corriente continua de drenaje: 5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 17 nS
Cossⓘ - Capacitancia de salida: 105 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.028 typ Ohm
Encapsulados: SOT23
Búsqueda de reemplazo de UT2302L-AE3 MOSFET
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UT2302L-AE3 datasheet
ut2302l-ae3.pdf
UT2302L-AE3 www.VBsemi.tw N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)e Qg (Typ.) Definition 0.028 at VGS = 4.5 V TrenchFET Power MOSFET 6a 100 % Rg Tested 20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC 0.050 at VGS = 1.8 V 5.6 APPLICATIONS DC/
ut2302.pdf
UNISONIC TECHNOLOGIES CO., LTD UT2302 Power MOSFET N-CHANNEL ENHANCEMENT MODE DESCRIPTION The UTC UT2302 is N-channel Power MOSFET, designed with high density cell, with fast switching speed, ultra low on-resistance, and excellent thermal and electrical capabilities. Used in commercial and industrial surface mount applications and suited for low voltage applications such as
ut2302g-ae2-r ut2302g-ae3-r.pdf
UNISONIC TECHNOLOGIES CO., LTD UT2302 Power MOSFET N-CHANNEL ENHANCEMENT MODE DESCRIPTION The UTC UT2302 is N-channel Power MOSFET, designed with high density cell, with fast switching speed, ultra low on-resistance, and excellent thermal and electrical capabilities. Used in commercial and industrial surface mount applications and suited for low voltage applications such a
ut2302g-ae3.pdf
UT2302G-AE3 www.VBsemi.tw N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)e Qg (Typ.) Definition 0.028 at VGS = 4.5 V TrenchFET Power MOSFET 6a 100 % Rg Tested 20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC 0.050 at VGS = 1.8 V 5.6 APPLICATIONS DC/
Otros transistores... SUU50N06-07L , TN0200K-T1 , TN0200TS , TP0101TS-T1 , TPCA8036 , UT100N03L , UT2301G-AE3-R , UT2302G-AE3 , 50N06 , UT2955G , UT6898G-S08-R , UT8205AG-AG6 , UTT25P10L , UTT80N10 , VB1102M , VB1106K , VB1218X .
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