FDB088N08 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FDB088N08
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 160 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 75 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 85 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 VQgⓘ - Carga de la puerta: 91 nC
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0088 Ohm
Paquete / Cubierta: TO263 D2PAK
Búsqueda de reemplazo de MOSFET FDB088N08
FDB088N08 Datasheet (PDF)
fdb088n08.pdf
February 2010FDB088N08N-Channel PowerTrench MOSFET 75V, 85A, 8.8mFeatures Description RDS(on) = 7.3 m ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semicon-ductors adcanced PowerTrench process that has been espe- Fast Switching Speedcially tailored to minimize the on-state resistance and yet Low Gate Chargemaintain superior
fdb082n15a.pdf
November 2013FDB082N15A N-Channel PowerTrench MOSFET150 V, 117 A, 8.2 mFeatures Description RDS(on) = 6.7 m (Typ.) @ VGS = 10 V, ID = 75 A This N-Channel MOSFET is produced using FairchildSemiconductors advance PowerTrench process that has Fast Switching Speedbeen tailored to minimize the on-state resistance while main-taining superior switching performance.
fdb082n15a.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
Otros transistores... FDB045AN08A0F085 , FDB047N10 , STU405DH , FDB050AN06A0 , FDB060AN08A0 , FDB070AN06A0 , FDB075N15A , FDB082N15A , 7N65 , FDB110N15A , FDB120N10 , STU407DH , FDB12N50F , FDB12N50TM , FDB12N50U , FDB13AN06A0 , FDB14AN06LA0F085 .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918