FDB12N50TM MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: FDB12N50TM
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 165 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 11.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.65 Ohm
Paquete / Cubierta: TO263 D2PAK

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FDB12N50TM Datasheet (PDF)

..1. Size:2875K fairchild semi
fdb12n50tm.pdf

June 2007UniFETTMFDB12N50TMtmN-Channel MOSFET 500V, 11.5A, 0.65Features Description RDS(on) = 0.55 ( Typ.)@ VGS = 10V, ID = 6A These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( Typ. 22nC) stripe, DMOS technology. Low Crss ( Typ. 12pF)This advanced technology has been especi

..2. Size:840K onsemi
fdb12n50tm.pdf

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

6.1. Size:602K fairchild semi
fdb12n50f.pdf

November 2007UniFETTMFDB12N50FtmN-Channel MOSFET, FRFET 500V, 11.5A, 0.7Features Description RDS(on) = 0.59 ( Typ.)@ VGS = 10V, ID = 6A These N-Channel enhancement mode power field effect transis-tors are produced using Fairchilds proprietary, planar stripe, Low gate charge ( Typ. 21nC)DMOS technology. Low Crss ( Typ. 11pF)This advance technology has b

6.2. Size:643K fairchild semi
fdb12n50u.pdf

March 2008TMUltra FRFETFDB12N50UtmN-Channel MOSFET, FRFET 500V, 10A, 0.8Features Description RDS(on) = 0.65 ( Typ.)@ VGS = 10V, ID = 5A These N-Channel enhancement mode power field effect transis-tors are produced using Fairchilds proprietary, planar stripe, Low gate charge ( Typ. 21nC)DMOS technology. Low Crss ( Typ. 11pF)This advance technology has

6.3. Size:756K onsemi
fdb12n50f.pdf

FDB12N50FN-Channel UniFETTM FRFET MOSFET500 V, 11.5 A, 700 mDescriptionFeaturesUniFETTM MOSFET is ON Semiconductors high voltage RDS(on) = 590 m (Typ.) @ VGS = 10 V, ID = 6 AMOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to Low Gate Charge (Typ. 21 nC)provide better switching performa

6.4. Size:934K cn vbsemi
fdb12n50f.pdf

FDB12N50Fwww.VBsemi.twPower MOSFETN-Channel 650V (D-S)FEATURESPRODUCT SUMMARYVDS (V) at TJ max. 670 Low figure-of-merit (FOM) Ron x Qg Low input capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.67 Reduced switching and conduction lossesQg max. (nC)41 Ultra low gate charge (Qg)Qgs (nC) 5 Avalanche energy rated (UIS)Qgd (nC)22Configurati

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