TSF16N50MR MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: TSF16N50MR
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 38.5 W
Voltaje máximo drenador - fuente |Vds|: 500 V
Voltaje máximo fuente - puerta |Vgs|: 30 V
Corriente continua de drenaje |Id|: 16 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
Carga de la puerta (Qg): 38 nC
Tiempo de subida (tr): 142 nS
Conductancia de drenaje-sustrato (Cd): 200 pF
Resistencia entre drenaje y fuente RDS(on): 0.4 Ohm
Paquete / Cubierta: TO220F
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TSF16N50MR Datasheet (PDF)
tsf16n50mr.pdf
TSF16N50MR500V N-Channel MOSFETGeneral DescriptionFeaturesThis Power MOSFET is produced using Truesemis 16.0A,500V,Max.RDS(on)=0.4 @ VGS =10Vadvanced planar stripe DMOS technology.This advanced technology has been especially tailored to Low gate charge(typical 32nC)minimize on-state resistance, provide superior switching High ruggednessperformance, and withs
tsf16n65mr.pdf
TSF16N65MR 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using Truesemis 16A,650V,Max.RDS(on)=0.52 @ =10V advanced planar stripe DMOS technology. This advanced technology has been especially tailored to VGS minimize on-state resistance, provide superior switching Low gate charge(typical 50nC)performance, and withstand high e
tsf16n60mr.pdf
TSF16N60MR 600V N-Channel MOSFET General Description Features This Power MOSFET is produced using Truesemis 16A,600V,Max.RDS(on)=0.47 @ VGS =10V advanced planar stripe DMOS technology. This advanced technology has been especially tailored to Low gate charge(typical 50nC)minimize on-state resistance, provide superior switching High ruggednessperformance, a
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