TSF18N50MR MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: TSF18N50MR
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 38.5 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 500 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 18 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 160 nS
Cossⓘ - Capacitancia de salida: 250 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.32 Ohm
Encapsulados: TO220F
Búsqueda de reemplazo de TSF18N50MR MOSFET
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TSF18N50MR datasheet
tsf18n50mr.pdf
TSF18N50MR 500V N-Channel MOSFET General Description Features This Power MOSFET is produced using Truesemi s 18.0A,500V,Max.RDS(on)=0.32 @ VGS =10V advanced planar stripe DMOS technology. This advanced technology has been especially tailored to Low gate charge(typical 45nC) minimize on-state resistance, provide superior switching High ruggedness performance, and with
tsf18n60mr.pdf
TSF18N60MR 600V N-Channel MOSFET General Description Features This Power MOSFET is produced using Truesemi s 18A,600V,Max.RDS(on)=0.45 @ VGS =10V advanced planar stripe DMOS technology. This advanced technology has been especially tailored to Low gate charge(typical 50nC) minimize on-state resistance, provide superior switching High ruggedness performance, and
tsf18n20m.pdf
TSF18N20M 200V N-Channel MOSFET General Description Features This Power MOSFET is produced using Truesemi s 18A,200V,Max.RDS(on)=0.17 @ VGS =10V advanced planar stripe DMOS technology. This advanced technology has been especially tailored to Low gate charge(typical 22nC) minimize on-state resistance, provide superior switching High ruggedness performance,
Otros transistores... TSD5N65M, TSU5N65M, TSD840MD, TSF10N80M, TSF16N50MR, TSF16N60MR, TSF16N65MR, TSF18N20M, IRFZ46N, TSF18N60MR, TSF20N50M, TSF20N60MR, TSF20N65MR, TSF4N90M, TSF60R190S2, TSP60R190S2, TSF65R190S2
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