TSF20N60MR MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: TSF20N60MR
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 40 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 20 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 149 nS
Cossⓘ - Capacitancia de salida: 264 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.4 Ohm
Encapsulados: TO220F
Búsqueda de reemplazo de TSF20N60MR MOSFET
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TSF20N60MR datasheet
tsf20n60mr.pdf
TSF20N60MR 600V N-Channel MOSFET General Description Features This Power MOSFET is produced using Truesemi s 20A,600V,RDS(on)=0.4 @ VGS =10V advanced planar stripe DMOS technology. This advanced technology has been especially tailored to Low gate charge(typical 57nC) minimize on-state resistance, provide superior switching High ruggedness performance, and wi
tsf20n65mr.pdf
TSF20N65MR 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using Truesemi s 20A,650V,RDS(on)=0.48 @ VGS =10V advanced planar stripe DMOS technology. This advanced technology has been especially tailored to Low gate charge(typical 57nC) minimize on-state resistance, provide superior switching High ruggedness performance, and with
tsf20n50m.pdf
TSF20N50M 500V N-Channel MOSFET General Description Features This Power MOSFET is produced using Truesemi s 20A,500V,Max.RDS(on)=0.28 @ VGS =10V advanced planar stripe DMOS technology. This advanced technology has been especially tailored to Low gate charge(typical 70nC) minimize on-state resistance, provide superior switching High ruggedness performance, and withstan
Otros transistores... TSF10N80M, TSF16N50MR, TSF16N60MR, TSF16N65MR, TSF18N20M, TSF18N50MR, TSF18N60MR, TSF20N50M, IRF9640, TSF20N65MR, TSF4N90M, TSF60R190S2, TSP60R190S2, TSF65R190S2, TSP65R190S2, TSA65R190S2, TSK65R190S2
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