TSF65R190S2 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: TSF65R190S2
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 34 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 20 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 39 nS
Cossⓘ - Capacitancia de salida: 68 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.19 Ohm
Paquete / Cubierta: TO220F
Búsqueda de reemplazo de TSF65R190S2 MOSFET
TSF65R190S2 Datasheet (PDF)
tsf65r190s2 tsp65r190s2 tsa65r190s2 tsk65r190s2.pdf

May, 2018SJ-FETTSF65R190S2/TSP65R190S2/TSA65R190S2/TSK65R190S2650V N-Channel Super-Junction MOSFET Gen-Description FeaturesSJ-FET is new generation of high voltage MOSFET family that Multi-Epi process SJ-FETis utilizing an advanced charge balance mechanism for outstanding 700V @TJ = 150 low on-resistance and lower gate charge performance. Typ. RDS(on) = 0.16T
tsf65r190s2 tsp65r190s2.pdf

May, 2018SJ-FETTSF65R190S2/TSP65R190S2650V N-Channel Super-Junction MOSFET Gen-Description FeaturesSJ-FET is new generation of high voltage MOSFET family that Multi-Epi process SJ-FETis utilizing an advanced charge balance mechanism for outstanding 700V @TJ = 150 low on-resistance and lower gate charge performance. Typ. RDS(on) = 0.16This advanced technology
tsf65r360s2.pdf

TSF65R360S2650V 15A N-Channel SJ-MOSFET General Description Features Truesemi SJ-FET is new generation of high voltage MOSFET family 700V @TJ = 150 that is utilizing an advanced charge balance mechanism for outstanding Typ. RDS(on) = 0.34low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction Ult
tsf65r300s1.pdf

TSF65R300S1 650V 15A N-Channel SJ-MOSFET General Description Features Truesemi SJ-FET is new generation of high voltage MOSFET family 700V @TJ = 150 that is utilizing an advanced charge balance mechanism for outstanding Typ. RDS(on) = 0.26low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction Ultr
Otros transistores... TSF18N50MR , TSF18N60MR , TSF20N50M , TSF20N60MR , TSF20N65MR , TSF4N90M , TSF60R190S2 , TSP60R190S2 , MMD60R360PRH , TSP65R190S2 , TSA65R190S2 , TSK65R190S2 , TSF65R360S2 , TSF840MD , TSF840MR , TSF9N90M , TSK80R240S1 .
History: LSB55R050GT | HM10P10D
History: LSB55R050GT | HM10P10D



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