TSF65R190S2 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: TSF65R190S2
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 34 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 20 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 39 nS
Cossⓘ - Capacitancia de salida: 68 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.19 Ohm
Encapsulados: TO220F
Búsqueda de reemplazo de TSF65R190S2 MOSFET
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TSF65R190S2 datasheet
tsf65r190s2 tsp65r190s2 tsa65r190s2 tsk65r190s2.pdf
May, 2018 SJ-FET TSF65R190S2/TSP65R190S2/TSA65R190S2/TSK65R190S2 650V N-Channel Super-Junction MOSFET Gen- Description Features SJ-FET is new generation of high voltage MOSFET family that Multi-Epi process SJ-FET is utilizing an advanced charge balance mechanism for outstanding 700V @TJ = 150 low on-resistance and lower gate charge performance. Typ. RDS(on) = 0.16 T
tsf65r190s2 tsp65r190s2.pdf
May, 2018 SJ-FET TSF65R190S2/TSP65R190S2 650V N-Channel Super-Junction MOSFET Gen- Description Features SJ-FET is new generation of high voltage MOSFET family that Multi-Epi process SJ-FET is utilizing an advanced charge balance mechanism for outstanding 700V @TJ = 150 low on-resistance and lower gate charge performance. Typ. RDS(on) = 0.16 This advanced technology
tsf65r360s2.pdf
TSF65R360S2 650V 15A N-Channel SJ-MOSFET General Description Features Truesemi SJ-FET is new generation of high voltage MOSFET family 700V @TJ = 150 that is utilizing an advanced charge balance mechanism for outstanding Typ. RDS(on) = 0.34 low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction Ult
tsf65r300s1.pdf
TSF65R300S1 650V 15A N-Channel SJ-MOSFET General Description Features Truesemi SJ-FET is new generation of high voltage MOSFET family 700V @TJ = 150 that is utilizing an advanced charge balance mechanism for outstanding Typ. RDS(on) = 0.26 low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction Ultr
Otros transistores... TSF18N50MR, TSF18N60MR, TSF20N50M, TSF20N60MR, TSF20N65MR, TSF4N90M, TSF60R190S2, TSP60R190S2, RU7088R, TSP65R190S2, TSA65R190S2, TSK65R190S2, TSF65R360S2, TSF840MD, TSF840MR, TSF9N90M, TSK80R240S1
History: AON2400 | AT5N60S
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