TSF10N60M MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: TSF10N60M
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 52 W
Voltaje máximo drenador - fuente |Vds|: 600 V
Voltaje máximo fuente - puerta |Vgs|: 30 V
Corriente continua de drenaje |Id|: 10 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 5 V
Carga de la puerta (Qg): 48 nC
Tiempo de subida (tr): 70 nS
Conductancia de drenaje-sustrato (Cd): 165 pF
Resistencia entre drenaje y fuente RDS(on): 0.8 Ohm
Paquete / Cubierta: TO220F
Búsqueda de reemplazo de MOSFET TSF10N60M
TSF10N60M Datasheet (PDF)
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TSP10N60M/TSF10N60M600V N-Channel MOSFETGeneral DescriptionFeaturesThis Power MOSFET is produced using Truesemis 10.0A,600V,Max.RDS(on)=0.8 @ VGS =10Vadvanced planar stripe DMOS technology.This advanced technology has been especially tailored to Low gate charge(typical 48nC)minimize on-state resistance, provide superior switching High ruggednessperformance,
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TSP10N65M/TSF10N65M650V N-Channel MOSFETGeneral DescriptionFeaturesThis Power MOSFET is produced using Truesemis 10.0A,650V,Max.RDS(on)=1.0 @ VGS =10Vadvanced planar stripe DMOS technology.This advanced technology has been especially tailored to Low gate charge(typical 48nC)minimize on-state resistance, provide superior switching High ruggednessperformance, a
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TSF10N80M 800V N-Channel MOSFET General Description Features This Power MOSFET is produced using Truesemis 10.0A,800V,Max.RDS(on)=1.10 @ VGS =10V advanced planar stripe DMOS technology. This advanced technology has been especially tailored to Low gate charge(typical 45nC)minimize on-state resistance, provide superior switching High ruggednessperformance,
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
