TSF10N60M Todos los transistores

 

TSF10N60M MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: TSF10N60M
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 52 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 10 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 70 nS
   Cossⓘ - Capacitancia de salida: 165 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.8 Ohm
   Paquete / Cubierta: TO220F
 

 Búsqueda de reemplazo de TSF10N60M MOSFET

   - Selección ⓘ de transistores por parámetros

 

TSF10N60M Datasheet (PDF)

 ..1. Size:1124K  truesemi
 tsp10n60m tsf10n60m.pdf pdf_icon

TSF10N60M

TSP10N60M/TSF10N60M600V N-Channel MOSFETGeneral DescriptionFeaturesThis Power MOSFET is produced using Truesemis 10.0A,600V,Max.RDS(on)=0.8 @ VGS =10Vadvanced planar stripe DMOS technology.This advanced technology has been especially tailored to Low gate charge(typical 48nC)minimize on-state resistance, provide superior switching High ruggednessperformance,

 7.1. Size:1254K  truesemi
 tsp10n65m tsf10n65m.pdf pdf_icon

TSF10N60M

TSP10N65M/TSF10N65M650V N-Channel MOSFETGeneral DescriptionFeaturesThis Power MOSFET is produced using Truesemis 10.0A,650V,Max.RDS(on)=1.0 @ VGS =10Vadvanced planar stripe DMOS technology.This advanced technology has been especially tailored to Low gate charge(typical 48nC)minimize on-state resistance, provide superior switching High ruggednessperformance, a

 8.1. Size:692K  truesemi
 tsf10n80m.pdf pdf_icon

TSF10N60M

TSF10N80M 800V N-Channel MOSFET General Description Features This Power MOSFET is produced using Truesemis 10.0A,800V,Max.RDS(on)=1.10 @ VGS =10V advanced planar stripe DMOS technology. This advanced technology has been especially tailored to Low gate charge(typical 45nC)minimize on-state resistance, provide superior switching High ruggednessperformance,

Otros transistores... TSK65R190S2 , TSF65R360S2 , TSF840MD , TSF840MR , TSF9N90M , TSK80R240S1 , TSK82N25M , TSP10N60M , 20N60 , TSP10N65M , TSF10N65M , TSP12N60M , TSF12N60M , TSP12N65M , TSF12N65M , TSP13N50M , TSF13N50M .

History: DH4N150F

 

 
Back to Top

 


 
.