TSF7N60M MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: TSF7N60M
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 48 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 7 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 50 nS
Cossⓘ - Capacitancia de salida: 110 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1.3 Ohm
Encapsulados: TO220F
Búsqueda de reemplazo de TSF7N60M MOSFET
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TSF7N60M datasheet
tsp7n60m tsf7n60m.pdf
TSP7N60M/TSF7N60M 600V N-Channel MOSFET General Description Features This Power MOSFET is produced using Truesemi s 7.0A,600V,Max.RDS(on)=1.3 @ VGS =10V advanced planar stripe DMOS technology. This advanced technology has been especially tailored to Low gate charge(typical 29nC) minimize on-state resistance, provide superior switching High ruggedness performance, and
tsp7n65m tsf7n65m.pdf
TSP7N65M/TSF7N65M 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using Truesemi s 7A,650V,Max.RDS(on)=1.6 @ VGS =10V advanced planar stripe DMOS technology. This advanced technology has been especially tailored to Low gate charge(typical 29nC) minimize on-state resistance, provide superior switching High ruggedness performance, and wi
tsp7n80m tsf7n80m.pdf
TSP7N80M/TSF7N80M 800V N-Channel MOSFET General Description Features This Power MOSFET is produced using Truesemi s 7.0A,800V,Max.RDS(on)=1.6 @ VGS =10V advanced planar stripe DMOS technology. This advanced technology has been especially tailored to Low gate charge(typical 40nC) minimize on-state resistance, provide superior switching High ruggedness performance, and
Otros transistores... TSF13N50M, TSP4N60M, TSF4N60M, TSP5N65M, TSF5N65M, TSP740MR, TSF740MR, TSP7N60M, 10N60, TSP7N65M, TSF7N65M, TSP7N80M, TSF7N80M, TSP840MR, TSP8N65M, TSF8N65M, YJB150G06AK
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