FDB2552 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FDB2552
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 150 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 150 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 37 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.036 Ohm
Búsqueda de reemplazo de FDB2552 MOSFET
- Selecciónⓘ de transistores por parámetros
FDB2552 datasheet
fdb2552 fdp2552.pdf
October 2002 FDB2552 / FDP2552 N-Channel PowerTrench MOSFET 150V, 37A, 36m Features Applications rDS(ON) = 32m (Typ.), VGS = 10V, ID = 16A DC/DC Converters and Off-line UPS Qg(tot) = 39nC (Typ.), VGS = 10V Distributed Power Architectures and VRMs Low Miller Charge Primary Switch for 24V and 48V Systems Low QRR Body Diode High Voltage Synchronous R
fdb2552 f085.pdf
April 2012 FDB2552_F085 N-Channel PowerTrench MOSFET 150V, 37A, 36m Features Applications rDS(ON) = 32m (Typ.), VGS = 10V, ID = 16A DC/DC Converters and Off-line UPS Qg(tot) = 39nC (Typ.), VGS = 10V Distributed Power Architectures and VRMs Low Miller Charge Primary Switch for 24V and 48V Systems Low QRR Body Diode High Voltage Synchronous Rectifie
fdb2552 f085.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fdb2572 fdp2572.pdf
September 2002 FDB2572 / FDP2572 N-Channel PowerTrench MOSFET 150V, 29A, 54m Features Applications rDS(ON) = 45m (Typ.), VGS = 10V, ID = 9A DC/DC converters and Off-Line UPS Qg(tot) = 26nC (Typ.), VGS = 10V Distributed Power Architectures and VRMs Low Miller Charge Primary Switch for 24V and 48V Systems Low QRR Body Diode High Voltage Synchrono
Otros transistores... FDB13AN06A0 , FDB14AN06LA0F085 , FDB14N30 , FDB150N10 , STU408D , FDB15N50 , FDB2532 , FDB2532F085 , K3569 , FDB2572 , FDB2614 , STU409DH , FDB2710 , FDB28N30TM , FDB33N25 , FDB3502 , FDB3632 .
History: WSD30L30DN | BRD50N03 | IRFB4615 | WSF12N10 | VN0104N7 | WSF3036A | SI2319
History: WSD30L30DN | BRD50N03 | IRFB4615 | WSF12N10 | VN0104N7 | WSF3036A | SI2319
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Recientemente añadidas las descripciónes de los transistores:
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