FDB2552 Todos los transistores

 

FDB2552 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FDB2552

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 150 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 150 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 37 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.036 Ohm

Encapsulados: TO263 D2PAK

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FDB2552 datasheet

 ..1. Size:256K  fairchild semi
fdb2552 fdp2552.pdf pdf_icon

FDB2552

October 2002 FDB2552 / FDP2552 N-Channel PowerTrench MOSFET 150V, 37A, 36m Features Applications rDS(ON) = 32m (Typ.), VGS = 10V, ID = 16A DC/DC Converters and Off-line UPS Qg(tot) = 39nC (Typ.), VGS = 10V Distributed Power Architectures and VRMs Low Miller Charge Primary Switch for 24V and 48V Systems Low QRR Body Diode High Voltage Synchronous R

 ..2. Size:416K  fairchild semi
fdb2552 f085.pdf pdf_icon

FDB2552

April 2012 FDB2552_F085 N-Channel PowerTrench MOSFET 150V, 37A, 36m Features Applications rDS(ON) = 32m (Typ.), VGS = 10V, ID = 16A DC/DC Converters and Off-line UPS Qg(tot) = 39nC (Typ.), VGS = 10V Distributed Power Architectures and VRMs Low Miller Charge Primary Switch for 24V and 48V Systems Low QRR Body Diode High Voltage Synchronous Rectifie

 ..3. Size:530K  onsemi
fdb2552 f085.pdf pdf_icon

FDB2552

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.1. Size:269K  fairchild semi
fdb2572 fdp2572.pdf pdf_icon

FDB2552

September 2002 FDB2572 / FDP2572 N-Channel PowerTrench MOSFET 150V, 29A, 54m Features Applications rDS(ON) = 45m (Typ.), VGS = 10V, ID = 9A DC/DC converters and Off-Line UPS Qg(tot) = 26nC (Typ.), VGS = 10V Distributed Power Architectures and VRMs Low Miller Charge Primary Switch for 24V and 48V Systems Low QRR Body Diode High Voltage Synchrono

Otros transistores... FDB13AN06A0 , FDB14AN06LA0F085 , FDB14N30 , FDB150N10 , STU408D , FDB15N50 , FDB2532 , FDB2532F085 , K3569 , FDB2572 , FDB2614 , STU409DH , FDB2710 , FDB28N30TM , FDB33N25 , FDB3502 , FDB3632 .

History: WSD30L30DN | BRD50N03 | IRFB4615 | WSF12N10 | VN0104N7 | WSF3036A | SI2319

 

 

 

 

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