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CSD17581Q5A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: CSD17581Q5A
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 3.1 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 24 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 21 nS
   Cossⓘ - Capacitancia de salida: 342 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0034 Ohm
   Paquete / Cubierta: SON5X6
 

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CSD17581Q5A Datasheet (PDF)

 ..1. Size:332K  texas
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CSD17581Q5A

Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD17581Q5ASLPS630 SEPTEMBER 2016CSD17581Q5A 30-V N-Channel NexFET Power MOSFETs1 FeaturesProduct Summary1 Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Low RDS(on)VDS Drain-to-Source Voltage 30 V Low Thermal ResistanceQg Gate Charge Total (4.5 V) 20 nC Avalanche Rate

 7.1. Size:941K  texas
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CSD17581Q5A

Support &Product Order Technical Tools &CommunityFolder Now Documents SoftwareCSD17585F5SLPS610A OCTOBER 2016 REVISED JANUARY 2017CSD17585F5 30-V N-Channel FemtoFET MOSFET.1 Features1 Low-On ResistanceProduct Summary Ultra-Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Ultra-Small FootprintVDS Drain-to-Source Voltage 30 VQg Gate Charge Total (4.5

 8.1. Size:843K  texas
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CSD17581Q5A

CSD17522Q5Awww.ti.com SLPS341A JUNE 2011REVISED AUGUST 201130V, N-Channel NexFET Power MOSFETsCheck for Samples: CSD17522Q5A1FEATURESPRODUCT SUMMARY2 Optimized for 5V Gate DriveVDS Drain to Source Voltage 30 V Ultralow Qg and QgdQg Gate Charge Total (4.5V) 3.6 nC Low Thermal ResistanceQgd Gate Charge Gate to Drain 1.1 nCVGS = 4.5V 10 m Avala

 8.2. Size:863K  texas
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CSD17581Q5A

CSD17510Q5Awww.ti.com SLPS271G JULY 2010 REVISED SEPTEMBER 201230V, N-Channel NexFET Power MOSFETsCheck for Samples: CSD17510Q5APRODUCT SUMMARY1FEATURESVDS Drain to Source Voltage 30 V2 Ultralow Qg and QgdQg Gate Charge Total (4.5V) 6.4 nC Low Thermal ResistanceQgd Gate Charge Gate to Drain 1.9 nC Avalanche RatedVGS = 4.5V 5.4 mRDS(on) Drain t

Otros transistores... YJS2022A , YJS2301A , YJS2308A , YJS3404A , YJS4409A , YJS4606A , YJS8205A , CSD15380F3 , IRF640 , CSD17585F5 , CSD18543Q3A , CSD19538Q3A , CSD23280F3 , CSD86360Q5D , CSD87333Q3D , CSD87335Q3D , CSD87355Q5D .

History: SD8901CY | WMO13P06T1 | 2SJ465

 

 
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