CSD19538Q3A MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: CSD19538Q3A

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.8 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 14 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 3 nS

Cossⓘ - Capacitancia de salida: 69 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0059 Ohm

Encapsulados: SON3.3X3.3

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CSD19538Q3A datasheet

 ..1. Size:352K  texas
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CSD19538Q3A

Support & Product Order Technical Tools & Community Folder Now Documents Software CSD19538Q3A SLPS583A MAY 2016 REVISED MARCH 2017 CSD19538Q3A 100-V N-Channel NexFET Power MOSFET 1 Features Product Summary 1 Ultra-Low Qg and Qgd TA = 25 C TYPICAL VALUE UNIT Low-Thermal Resistance VDS Drain-to-Source Voltage 100 V Avalanche Rated Qg Gate Charge Total (10 V) 4

 7.1. Size:404K  texas
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CSD19538Q3A

Sample & Support & Product Technical Tools & Buy Community Folder Documents Software CSD19536KCS SLPS485B JANUARY 2014 REVISED OCTOBER 2014 CSD19536KCS 100 V N-Channel NexFET Power MOSFET 1 Features Product Summary 1 Ultra-Low Qg and Qgd TA = 25 C TYPICAL VALUE UNIT Low Thermal Resistance VDS Drain-to-Source Voltage 100 V Avalanche Rated Qg Gate Charge Tota

 7.2. Size:1281K  texas
csd19531q5a.pdf pdf_icon

CSD19538Q3A

Sample & Support & Product Technical Tools & Buy Community Folder Documents Software CSD19531Q5A SLPS406B SEPTEMBER 2013 REVISED MAY 2014 CSD19531Q5A 100 V N-Channel NexFET Power MOSFETs 1 Features Product Summary 1 Ultra-Low Qg and Qgd TA = 25 C TYPICAL VALUE UNIT Low Thermal Resistance VDS Drain-to-Source Voltage 100 V Avalanche Rated Qg Gate Charge Total

 7.3. Size:504K  texas
csd19537q3.pdf pdf_icon

CSD19538Q3A

Sample & Support & Product Technical Tools & Buy Community Folder Documents Software CSD19537Q3 SLPS549 AUGUST 2015 CSD19537Q3 100 V N-Channel NexFET Power MOSFET 1 Features Product Summary 1 Ultra-Low Qg and Qgd TA = 25 C TYPICAL VALUE UNIT Low Thermal Resistance VDS Drain-to-Source Voltage 100 V Avalanche Rated Qg Gate Charge Total (10 V) 16 nC Pb-Free

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