CSD88537ND MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: CSD88537ND
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2.1 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 15 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 15 nS
Cossⓘ - Capacitancia de salida: 133 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.015 Ohm
Paquete / Cubierta: SO8
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CSD88537ND Datasheet (PDF)
csd88537nd.pdf

Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD88537NDZHCSCQ9A JANUARY 2014 REVISED AUGUST 2014CSD88537ND 60V N NexFET (MOSFET)1 1 Qg QgdTA = 25
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Otros transistores... CSD19538Q3A , CSD23280F3 , CSD86360Q5D , CSD87333Q3D , CSD87335Q3D , CSD87355Q5D , CSD87384M , CSD87588N , IRFB4227 , TPS1100 , TPS1100Y , TPS1101 , TPS1101Y , TPS1120 , TPS1120Y , TMA10N60H , TMA10N65H .
History: IRLZ44ZL | RK7002BMHZG | STB26NM60N | SSD02N65 | AO4472 | SMG2302 | ST1004SRG
History: IRLZ44ZL | RK7002BMHZG | STB26NM60N | SSD02N65 | AO4472 | SMG2302 | ST1004SRG



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