TMP120N08A MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: TMP120N08A
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 208 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 80 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 120 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 29.5 nS
Cossⓘ - Capacitancia de salida: 390 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.006 Ohm
Encapsulados: TO220
Búsqueda de reemplazo de TMP120N08A MOSFET
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TMP120N08A datasheet
tmb120n08a tmp120n08a.pdf
TMB120N08A,TMP120N08A Wuxi Unigroup Microelectronics CO.,LTD. 80V N-Channel Trench MOSFET Product Summary Features Trench Power Technology VDS 80V Low RDS(ON) RDS(ON) (at VGS=10V)
tmp120n10a.pdf
TMP120N10A Wuxi Unigroup Microelectronics Company 100V N-Channel Trench MOSFET FEATURES High Density Cell Design for Ultra Low Rdson Fully Characterized Avalanche Voltage and Current Good Stability with High EAS Excellent Package for Good Heat Dissipation APPLICATIONS Power Switching Application Hard Switched and High Frequency Circuits Uninter
tmp12n60a tmpf12n60a.pdf
TMP12N60A(G)/TMPF12N60A(G) N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 600V 12A
tmp12n60 tmpf12n60.pdf
TMP12N60/TMPF12N60 TMP12N60G/TMPF12N60G VDSS = 660 V @Tjmax Features ID = 12A Low gate charge RDS(on) = 0.65 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification D G S Device Package Marking Remark TMP12N60 / TMPF12N60 TO-220 / TO-220F TMP12N60 / TMPF12N60 RoHS TMP12N60G / TMPF12N60G
Otros transistores... TMA8N60H, TMD8N60H, TMU8N60H, TMA8N65H, TMC8N65H, TMD8N65H, TMU8N65H, TMB120N08A, 10N65, TMB140N10A, TMB160N08A, TMP160N08A, TMB80N08A, TMP80N08A, TMD02N15AT, TMU02N15AT, TMP120N10A
History: 6N60G | DMN32D2LDF | 6HP04CH | FQD16N15TM | BL9N20-P
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