TPP60R160M MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: TPP60R160M
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 151 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 20 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 69 nS
Cossⓘ - Capacitancia de salida: 71 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.16 Ohm
Paquete / Cubierta: TO220
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TPP60R160M Datasheet (PDF)
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Otros transistores... TMD02N15AT , TMU02N15AT , TMP120N10A , TMP160N10A , TPA120R800A , TPB120R800A , TPW120R800A , TPA60R160M , IRF520 , TPV60R160M , TPW60R160M , TPA60R170MFD , TPA60R240M , TPB60R240M , TPC60R240M , TPP60R240M , TPA60R260MFD .
History: IRLU9343 | NCE40H25LL | IPF09N03LA | KCY3310A | 8205S | IRFB3077 | VN1206N2
History: IRLU9343 | NCE40H25LL | IPF09N03LA | KCY3310A | 8205S | IRFB3077 | VN1206N2



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