TPV60R160M MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: TPV60R160M
   Código: 60R160M
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 151 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 20 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 38 nC
   trⓘ - Tiempo de subida: 69 nS
   Cossⓘ - Capacitancia de salida: 71 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.16 Ohm
   Paquete / Cubierta: TO3PN

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TPV60R160M Datasheet (PDF)

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MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby TPV6030/DThe RF LineNPN SiliconTPV6030RF Power TransistorThe TPV6030 is designed for driver stages in band IV and V TV transmitteramplifiers. It incorporates high value emitter ballast resistors, gold metalliza-tions and offers a high degree of reliability and ruggedness.Including double input and output matching ne

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History: KPA1716 | 2N6963

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