TPV60R160M Todos los transistores

 

TPV60R160M MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: TPV60R160M
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 151 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 20 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 69 nS
   Cossⓘ - Capacitancia de salida: 71 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.16 Ohm
   Paquete / Cubierta: TO3PN
 

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TPV60R160M Datasheet (PDF)

 ..1. Size:671K  cn wuxi unigroup
 tpa60r160m tpp60r160m tpv60r160m tpw60r160m.pdf pdf_icon

TPV60R160M

TPA60R160M, TPP60R160M, TPV60R160M, TPW60R160M WuxiUnigroupMicroelectronicsCompany600V Super-Junction Power MOSFETFEATURESlVerylowFOMRDS(on)Qgl100%avalanchetestedlRoHScompliantAPPLICATIONSlSwitchModePowerSupply(SMPS)lUninterruptiblePowerSupply(UPS)lPowerFactorCorrection(PFC)Device Marking and Package InformationDevic

 7.1. Size:608K  cn wuxi unigroup
 tpp60r150c tpa60r150c tpv60r150c tpc60r150c.pdf pdf_icon

TPV60R160M

TPP60R150C, TPA60R150C, TPV60R150C, TPC60R150C Wuxi Unigroup Microelectronics Company 600V Super-Junction Power MOSFET FEATURES Very low FOM RDS(on)Qg 100% avalanche tested RoHS compliant APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device P

 8.1. Size:359K  cn wuxi unigroup
 tpv60r080cfd tpw60r080cfd.pdf pdf_icon

TPV60R160M

TPV60R080CFD, TPW60R080CFD Wuxi Unigroup Microelectronics Company 600V Super-Junction Power MOSFET FEATURES Very low FOM RDS(on)Qg 100% avalanche tested RoHS compliant Fast Body Diode APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device

 9.1. Size:58K  motorola
 tpv6030r.pdf pdf_icon

TPV60R160M

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby TPV6030/DThe RF LineNPN SiliconTPV6030RF Power TransistorThe TPV6030 is designed for driver stages in band IV and V TV transmitteramplifiers. It incorporates high value emitter ballast resistors, gold metalliza-tions and offers a high degree of reliability and ruggedness.Including double input and output matching ne

MOSTRAR MÁS

Otros transistores... TMU02N15AT , TMP120N10A , TMP160N10A , TPA120R800A , TPB120R800A , TPW120R800A , TPA60R160M , TPP60R160M , RU6888R , TPW60R160M , TPA60R170MFD , TPA60R240M , TPB60R240M , TPC60R240M , TPP60R240M , TPA60R260MFD , TPA60R330M .

History: STB60NF06L | IRFR410 | SI5429DU | NCEP039N10MD | SFG08R06DF | WST3034 | HYG013N03LS1C2

 

 
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