TPV60R160M MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: TPV60R160M

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 151 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 20 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 69 nS

Cossⓘ - Capacitancia de salida: 71 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.16 Ohm

Encapsulados: TO3PN

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TPV60R160M datasheet

 ..1. Size:671K  cn wuxi unigroup
 tpa60r160m tpp60r160m tpv60r160m tpw60r160m.pdf pdf_icon

TPV60R160M

TPA60R160M, TPP60R160M, TPV60R160M, TPW60R160M Wuxi Unigroup Microelectronics Company 600V Super-Junction Power MOSFET FEATURES l Very low FOM RDS(on) Qg l 100% avalanche tested l RoHS compliant APPLICATIONS l Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply (UPS) l Power Factor Correction (PFC) Device Marking and Package Information Devic

 7.1. Size:608K  cn wuxi unigroup
 tpp60r150c tpa60r150c tpv60r150c tpc60r150c.pdf pdf_icon

TPV60R160M

TPP60R150C, TPA60R150C, TPV60R150C, TPC60R150C Wuxi Unigroup Microelectronics Company 600V Super-Junction Power MOSFET FEATURES Very low FOM RDS(on) Qg 100% avalanche tested RoHS compliant APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device P

 8.1. Size:359K  cn wuxi unigroup
 tpv60r080cfd tpw60r080cfd.pdf pdf_icon

TPV60R160M

TPV60R080CFD, TPW60R080CFD Wuxi Unigroup Microelectronics Company 600V Super-Junction Power MOSFET FEATURES Very low FOM RDS(on) Qg 100% avalanche tested RoHS compliant Fast Body Diode APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device

 9.1. Size:58K  motorola
 tpv6030r.pdf pdf_icon

TPV60R160M

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by TPV6030/D The RF Line NPN Silicon TPV6030 RF Power Transistor The TPV6030 is designed for driver stages in band IV and V TV transmitter amplifiers. It incorporates high value emitter ballast resistors, gold metalliza- tions and offers a high degree of reliability and ruggedness. Including double input and output matching ne

MOSTRAR MÁS

Otros transistores... TMU02N15AT, TMP120N10A, TMP160N10A, TPA120R800A, TPB120R800A, TPW120R800A, TPA60R160M, TPP60R160M, AO3400A, TPW60R160M, TPA60R170MFD, TPA60R240M, TPB60R240M, TPC60R240M, TPP60R240M, TPA60R260MFD, TPA60R330M