TPA60R260MFD MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: TPA60R260MFD
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 32 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua
de drenaje: 15 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 29 nS
Cossⓘ - Capacitancia de salida: 62 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.26 Ohm
Encapsulados: TO220F
Búsqueda de reemplazo de TPA60R260MFD MOSFET
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TPA60R260MFD datasheet
..1. Size:484K cn wuxi unigroup
tpa60r260mfd.pdf 
TPA60R260MFD Wuxi Unigroup Microelectronics Co.,Ltd 600V Super-Junction Power MOSFET DESCRIPTION 600V Super-junction Power MOSFET Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETs designed according to the SJ principle and pioneered. The Multi-EPI SJ MOSFET provide an extremely fast and robust body diode. Also provide an extremely low switching
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8.5. Size:500K cn wuxi unigroup
tpa60r360mfd.pdf 
TPA60R360MFD Wuxi Unigroup Microelectronics Co.,Ltd 600V Super-Junction Power MOSFET DESCRIPTION 600V Super-junction Power MOSFET Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETs designed according to the SJ principle and pioneered. The Multi-EPI SJ MOSFET provide an extremely fast and robust body diode. Also provide an extremely low switching,
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Otros transistores... TPP60R160M, TPV60R160M, TPW60R160M, TPA60R170MFD, TPA60R240M, TPB60R240M, TPC60R240M, TPP60R240M, IRF830, TPA60R330M, TPA60R360MFD, TPD60R360MFD, TPA60R3K4C, TPP60R3K4C, TPU60R3K4C, TPD60R3K4C, TPA60R530M