TPW65R100MFD MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: TPW65R100MFD

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 391 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 47 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 123 nS

Cossⓘ - Capacitancia de salida: 106 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.1 Ohm

Encapsulados: TO247

 Búsqueda de reemplazo de TPW65R100MFD MOSFET

- Selecciónⓘ de transistores por parámetros

 

TPW65R100MFD datasheet

 ..1. Size:649K  cn wuxi unigroup
 tpa65r100mfd tpv65r100mfd tpw65r100mfd.pdf pdf_icon

TPW65R100MFD

TPA65R100MFD,TPV65R100MFD,TPW65R100MFD Wuxi Unigroup Microelectronics Co.,Ltd 650V Super-junction Power MOSFET DESCRIPTION 650V Super-junction Power MOSFET Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETs designed according to the SJ principle and pioneered. The Multi-EPI SJ MOSFET provide an extremely fast and robust body diode. Also provide a

 7.1. Size:832K  cn wuxi unigroup
 tpb65r135mfd tpp65r135mfd tpw65r135mfd.pdf pdf_icon

TPW65R100MFD

TPB65R135MFD,TPP65R135MFD,TPW65R135MFD Wuxi Unigroup Microelectronics Co.,Ltd 650V Super-junction Power MOSFET Description 650V Super-junction Power MOSFET Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETs designed according to the SJ principle and pioneered. The Multi-EPI SJ MOSFET provide an extremely fast and robust body diode. Also provide an

 7.2. Size:947K  cn wuxi unigroup
 tpa65r170m tpb65r170m tpc65r170m tpp65r170m tpv65r170m tpw65r170m.pdf pdf_icon

TPW65R100MFD

TPA65R170M,TPB65R170M,TPC65R170M,TPP65R170M,TPV65R170M,TPW65R170M Wuxi Unigroup Microelectronics Co.,Ltd 650V Super-junction Power MOSFET DESCRIPTION 650V Super-junction Power MOSFET Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETs designed according to the SJ principle. The Multi-EPI SJ MOSFET provide an extremely low switching, communication

 7.3. Size:626K  cn wuxi unigroup
 tpa65r170m tpp65r170m tpv65r170m tpw65r170m.pdf pdf_icon

TPW65R100MFD

TPA65R170M, TPP65R170M, TPV65R170M, TPW65R170M Wuxi Unigroup Microelectronics Company 650V Super-Junction Power MOSFET FEATURES Very low FOM RDS(on) Qg 100% avalanche tested RoHS compliant APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device T

MOSTRAR MÁS

Otros transistores... TPD60R600MFD, TPA65R070D, TPB65R070D, TPP65R070D, TPW65R070D, TPA65R090M, TPA65R100MFD, TPV65R100MFD, IRF540N, TPA65R160C, TPB65R160C, TPP65R160C, TPR65R160C, TPV65R160C, TPA65R170M, TPB65R170M, TPC65R170M