TPW65R170M MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: TPW65R170M
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 151 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 20 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 59 nS
Cossⓘ - Capacitancia de salida: 59 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.17 Ohm
Paquete / Cubierta: TO247
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TPW65R170M Datasheet (PDF)
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Otros transistores... TPP65R160C , TPR65R160C , TPV65R160C , TPA65R170M , TPB65R170M , TPC65R170M , TPP65R170M , TPV65R170M , IRF3710 , TPA65R180D , TPA65R190MFD , TPA65R1K5M , TPD65R1K5M , TPU65R1K5M , TPY65R1K5MB , TPA65R260M , TPB65R260M .
History: HFS2N60S | KRF7501 | ME95N03T | GM2302 | AO4800 | AON7518 | IPB77N06S2-12
History: HFS2N60S | KRF7501 | ME95N03T | GM2302 | AO4800 | AON7518 | IPB77N06S2-12



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