TPU65R280D MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: TPU65R280D
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 104 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 15 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 17 nS
Cossⓘ - Capacitancia de salida: 81 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.28 Ohm
Paquete / Cubierta: TO251
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TPU65R280D Datasheet (PDF)
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Otros transistores... TPP65R260M , TPV65R260M , TPW65R260M , TPA65R280D , TPB65R280D , TPC65R280D , TPD65R280D , TPP65R280D , IRF4905 , TPA65R300MFD , TPA65R360M , TPB65R360M , TPC65R360M , TPD65R360M , TPP65R360M , TPR65R360M , TPU65R360M .
History: CED3120 | IXTK33N50 | PHD96NQ03LT | RJK4518DPK | APT10026L2FL | CSI4N60 | P2806HV
History: CED3120 | IXTK33N50 | PHD96NQ03LT | RJK4518DPK | APT10026L2FL | CSI4N60 | P2806HV



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