TPU65R600M Todos los transistores

 

TPU65R600M MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: TPU65R600M
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 63 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 7 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 61 nS
   Cossⓘ - Capacitancia de salida: 23 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.6 Ohm
   Paquete / Cubierta: TO251
 

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TPU65R600M Datasheet (PDF)

 ..1. Size:902K  cn wuxi unigroup
 tpa65r600m tpb65r600m tpd65r600m tpu65r600m.pdf pdf_icon

TPU65R600M

TPA65R600M,TPB65R600M,TPD65R600M,TPU65R600MWuxi Unigroup Microelectronics Co.,Ltd650V Super-junction Power MOSFETDescription650V Super-junction Power MOSFETSuper-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The Multi-EPI SJ MOSFET provide an extremely low switching, communication and conduction losses de

 5.1. Size:741K  cn wuxi unigroup
 tpp65r600c tpa65r600c tpu65r600c tpd65r600c tpc65r600c tpb65r600c.pdf pdf_icon

TPU65R600M

TPP65R600C, TPA65R600C, TPU65R600C, TPD65R600C, TPC65R600C, TPB65R600C Wuxi Unigroup Microelectronics Company 650V Super-Junction Power MOSFET FEATURES Very low FOM RDS(on)Qg 100% avalanche tested RoHS compliant APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package

 8.1. Size:1239K  cn wuxi unigroup
 tpa65r360m tpb65r360m tpc65r360m tpd65r360m tpp65r360m tpr65r360m tpu65r360m.pdf pdf_icon

TPU65R600M

TPA65R360M,TPB65R360M,TPC65R360M,TPD65R360M,TPP65R360M,TPR65R360M,TPU65R360MWuxi Unigroup Microelectronics Co.,Ltd650V Super-junction Power MOSFETDescription650V Super-junction Power MOSFETSuper-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The Multi-EPI SJ MOSFET provide an extremely low switching, com

 8.2. Size:515K  cn wuxi unigroup
 tpp65r940c tpa65r940c tpu65r940c tpd65r940c tpc65r940c tpb65r940c.pdf pdf_icon

TPU65R600M

TPP65R940C, TPA65R940C, TPU65R940C, TPD65R940C, TPC65R940C, TPB65R940C Wuxi Unigroup Microelectronics Company 650V Super-Junction Power MOSFET FEATURES Very low FOM RDS(on)Qg 100% avalanche tested RoHS compliant APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package

MOSTRAR MÁS

Otros transistores... TPU65R360M , TPA65R380D , TPD65R380D , TPA65R520D , TPD65R520D , TPA65R600M , TPB65R600M , TPD65R600M , AO4407 , TPA65R750C , TPB65R750C , TPC65R750C , TPD65R750C , TPP65R750C , TPU65R750C , TPA65R950M , TPB65R950M .

History: PMZ390UNE | P6803HVG | NCEP8818AS | 2SK1723 | IPB65R190CFD | FQD1P50TM | STF16NM50N

 

 
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