TPA65R750C Todos los transistores

 

TPA65R750C MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: TPA65R750C
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 25 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 26 nS
   Cossⓘ - Capacitancia de salida: 24 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.8 Ohm
   Paquete / Cubierta: TO220F
 

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TPA65R750C Datasheet (PDF)

 ..1. Size:758K  cn wuxi unigroup
tpa65r750c tpb65r750c tpc65r750c tpd65r750c tpp65r750c tpu65r750c.pdf pdf_icon

TPA65R750C

TPA65R750C, TPB65R750C, TPC65R750C, TPD65R750C, TPP65R750C, TPU65R750C Wuxi Unigroup Microelectronics Company 650V Super-Junction Power MOSFET FEATURES Very low FOM RDS(on)Qg 100% avalanche tested RoHS compliant APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package

 8.1. Size:554K  cn wuxi unigroup
tpp65r160c tpa65r160c tpv65r160c.pdf pdf_icon

TPA65R750C

TPP65R160C, TPA65R160C, TPV65R160C Wuxi Unigroup Microelectronics Company 650V Super-Junction Power MOSFET FEATURES Very low FOM RDS(on)Qg 100% avalanche tested RoHS compliant APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marki

 8.2. Size:1239K  cn wuxi unigroup
tpa65r360m tpb65r360m tpc65r360m tpd65r360m tpp65r360m tpr65r360m tpu65r360m.pdf pdf_icon

TPA65R750C

TPA65R360M,TPB65R360M,TPC65R360M,TPD65R360M,TPP65R360M,TPR65R360M,TPU65R360MWuxi Unigroup Microelectronics Co.,Ltd650V Super-junction Power MOSFETDescription650V Super-junction Power MOSFETSuper-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The Multi-EPI SJ MOSFET provide an extremely low switching, com

 8.3. Size:748K  cn wuxi unigroup
tpa65r950m tpd65r950m.pdf pdf_icon

TPA65R750C

TPA65R950M,TPD65R950MWuxi Unigroup Microelectronics Co.,Ltd650V Super-junction Power MOSFETDescription650V Super-junction Power MOSFETSuper-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The Multi-EPI SJ MOSFET provide an extremely low switching, communication and conduction losses device with highest ro

Otros transistores... TPA65R380D , TPD65R380D , TPA65R520D , TPD65R520D , TPA65R600M , TPB65R600M , TPD65R600M , TPU65R600M , IRLB4132 , TPB65R750C , TPC65R750C , TPD65R750C , TPP65R750C , TPU65R750C , TPA65R950M , TPB65R950M , TPD65R950M .

History: SPD50N03S2L-06G | FS10UM-9 | AM7431P | SPP03N60S5 | AM50N10-14I | AP9475GM | 50N06A

 

 
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