TPD65R950M Todos los transistores

 

TPD65R950M MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: TPD65R950M
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 37 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 4.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 62 nS
   Cossⓘ - Capacitancia de salida: 18 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.95 Ohm
   Paquete / Cubierta: TO252
 

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TPD65R950M Datasheet (PDF)

 ..1. Size:748K  cn wuxi unigroup
tpa65r950m tpd65r950m.pdf pdf_icon

TPD65R950M

TPA65R950M,TPD65R950MWuxi Unigroup Microelectronics Co.,Ltd650V Super-junction Power MOSFETDescription650V Super-junction Power MOSFETSuper-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The Multi-EPI SJ MOSFET provide an extremely low switching, communication and conduction losses device with highest ro

 ..2. Size:919K  cn wuxi unigroup
tpa65r950m tpb65r950m tpd65r950m.pdf pdf_icon

TPD65R950M

TPA65R950M,TPB65R950M,TPD65R950MWuxi Unigroup Microelectronics Co.,Ltd650V Super-junction Power MOSFETDescription650V Super-junction Power MOSFETSuper-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The Multi-EPI SJ MOSFET provide an extremely low switching, communication and conduction losses device with

 7.1. Size:515K  cn wuxi unigroup
tpp65r940c tpa65r940c tpu65r940c tpd65r940c tpc65r940c tpb65r940c.pdf pdf_icon

TPD65R950M

TPP65R940C, TPA65R940C, TPU65R940C, TPD65R940C, TPC65R940C, TPB65R940C Wuxi Unigroup Microelectronics Company 650V Super-Junction Power MOSFET FEATURES Very low FOM RDS(on)Qg 100% avalanche tested RoHS compliant APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package

 8.1. Size:473K  cn wuxi unigroup
tpd65r520d.pdf pdf_icon

TPD65R950M

TPD65R520D Wuxi Unigroup Microelectronics Company 650V Super-Junction Power MOSFET DESCRIPTION 650V super-junction Power MOSFET Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The SJ MOSFET is a price-performance optimized product enabling to target cost sensitive applications in Consumer and Ligh

Otros transistores... TPA65R750C , TPB65R750C , TPC65R750C , TPD65R750C , TPP65R750C , TPU65R750C , TPA65R950M , TPB65R950M , 10N65 , TPA70R190C , TPC70R190C , TPP70R190C , TPV70R190C , TPA70R260M , TPA70R360M , TPD70R360M , TPP70R360M .

History: HAT2080T | VBZFB40P03 | 2P7154BC | 2SK1723 | SWN4N70D1 | 2SK1059-Z | H07N60F

 

 
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