TPP70R190C MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: TPP70R190C
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 198 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 700 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 20 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 14 nS
Cossⓘ - Capacitancia de salida: 116 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.21 Ohm
Paquete / Cubierta: TO220
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TPP70R190C Datasheet (PDF)
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Otros transistores... TPD65R750C , TPP65R750C , TPU65R750C , TPA65R950M , TPB65R950M , TPD65R950M , TPA70R190C , TPC70R190C , 5N65 , TPV70R190C , TPA70R260M , TPA70R360M , TPD70R360M , TPP70R360M , TPU70R360M , TPA70R450C , TPB70R450C .
History: SSF11NS65F | BRCS2N65QF | SI7720DN | MTM8N35 | MSK30N03DF | LND10N65 | AP6679BGH-HF
History: SSF11NS65F | BRCS2N65QF | SI7720DN | MTM8N35 | MSK30N03DF | LND10N65 | AP6679BGH-HF



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