TPB70R600M MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: TPB70R600M
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 63 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 700 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 7 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 61 nS
Cossⓘ - Capacitancia de salida: 23 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.6 Ohm
Paquete / Cubierta: TO263
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TPB70R600M Datasheet (PDF)
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Otros transistores... TPU70R360M , TPA70R450C , TPB70R450C , TPC70R450C , TPD70R450C , TPP70R450C , TPU70R450C , TPA70R600M , AO3401 , TPD70R600M , TPR70R600M , TPU70R600M , TPA73R190M , TPA73R300M , TPA73R400M , TPA80R180M , TPB80R180M .
History: HGP130N12SL | AP75T10GP | NCEP40P65QU | PM516BZ | P5015BD
History: HGP130N12SL | AP75T10GP | NCEP40P65QU | PM516BZ | P5015BD



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