TPD70R600M MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: TPD70R600M
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 63 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 700 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 7 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 61 nS
Cossⓘ - Capacitancia de salida: 23 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.6 Ohm
Paquete / Cubierta: TO252
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TPD70R600M Datasheet (PDF)
tpd70r600m.pdf

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TPA70R360M, TPD70R360M, TPP70R360M, TPU70R360M Wuxi Unigroup Microelectronics Company 700V Super-Junction Power MOSFET FEATURES Very low FOM RDS(on)Qg 100% avalanche tested RoHS compliant APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device T
Otros transistores... TPA70R450C , TPB70R450C , TPC70R450C , TPD70R450C , TPP70R450C , TPU70R450C , TPA70R600M , TPB70R600M , IRF520 , TPR70R600M , TPU70R600M , TPA73R190M , TPA73R300M , TPA73R400M , TPA80R180M , TPB80R180M , TPA80R250A .
History: HFN6N70U | AUIRFS3004-7P | HY3215W | IXFV74N20P | FQPF3P20 | AP65PN2R6H | IRFZ48PBF
History: HFN6N70U | AUIRFS3004-7P | HY3215W | IXFV74N20P | FQPF3P20 | AP65PN2R6H | IRFZ48PBF



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