TPB80R180M MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: TPB80R180M
Código: 80R180M
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 215 W
Voltaje máximo drenador - fuente |Vds|: 800 V
Voltaje máximo fuente - puerta |Vgs|: 30 V
Corriente continua de drenaje |Id|: 23 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4.5 V
Carga de la puerta (Qg): 54.9 nC
Tiempo de subida (tr): 76.9 nS
Conductancia de drenaje-sustrato (Cd): 56.81 pF
Resistencia entre drenaje y fuente RDS(on): 0.18 Ohm
Paquete / Cubierta: TO263
Búsqueda de reemplazo de MOSFET TPB80R180M
TPB80R180M Datasheet (PDF)
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History: STB12NM50T4 | WMM25N65EM
